Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal–Oxide–Semiconductor Field-Effect-Transistor Devices

Abstract

In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation. #

Suppression of tunneling leakage current in junctionless nanowire transistors

“…The DMG-JNT and the conventional JNT are simulated with 5 nm radius(R), 1 nm EOT and doping concentration (N d ) of 1 × 10 19 cm −3 unless otherwise noted. As for the DMG-JNT, work functions of the two metal gates, 'control gate' and 'screen gate', are initially designed to be 5.1 eV (M 1 ) and 4.52 eV (M 2 ), respectively, according to the guidelines in [26]. The lengths of them are initially set to be L 1 = L 2 .…”