Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance

Bouchikhi, Benachir; Valmont, G.; Michel, C.; Ravelet, S.

doi:10.1016/0040-6090(87)90094-0

Cited by 8 publications

(4 citation statements)

References 17 publications

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“…The anneal was performed after the deposition at the top of Au contact in order to improve the quality of the oxide and the interfacial layer. [17][18][19] MIS samples oxided by air are also used in this study. There are samples A and B ͑the oxide thickness is 35 Å for sample A and 45 Å for sample B͒.…”

Section: Methodsmentioning

confidence: 99%

Physical parameters of Au–n-InP structures

Touhami

Ravelet²

1999

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 99%

Physical parameters of Au–n-InP structures

Touhami

Ravelet²

1999

Journal of Applied Physics

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“…Note that if g = 0 and R s = 0 in (13), the case of MOS diodes for which there are no¯owing electrons within the interfacial layer, the model obtained is the one proposed by Zeisse (1979) and used by Bouchikhi et al (1987) for the investigation of the InP MIS devices. Figure 1 shows the proposed equivalent circuit for an MIS tunnel diode.…”

Section: Basic Equations Of the Suggested Modelmentioning

confidence: 98%

MIS tunnel admittance with an inhomogeneous dielectric

Ouennoughi¹,

Sellai²

1997

International Journal of Electronics

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A suitable equivalent circuit which incorporates the losses in the oxide layer of MIS tunnel structures is presented. The frequency dependence of the forward capacitance± voltage and conductance± voltage characteristics also are investigated while taking into account the parallel impedance attributed to the insulating layer. In fact, the latter is included in the model as a conductance in parallel with a capacitance, the contribution of which can be subtracted from the crudely measured data. The admittance expression of an ideal MIS tunnel diode can be readily derived as a special case from the more general proposed relations. The effect of the oxide conductance on the overall structure capacitance is shown to be appreciable at low frequencies. The effect is such that the capacitance falls rapidly as the frequency decreases, whereas the conductance increases with frequency in the low frequency limit.

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“…Oxynitride film thickness : 36 nm.] sées sur GaAs ou sur InP [11][12][13][14][15][16][17][18] et est souvent interprété comme lié, soit à la présence d'une forte densité d'états d'interface [12], soit à l'existence d'une conductance non négligeable dans la couche isolante [13,17]. Dans notre cas, la dispersion semble trop importante pour pouvoir être attribuée à la seule présence d'une forte densité d'états d'interface.…”

Section: Elaboration Et Caractérisation Des Structures Misunclassified