Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO

Abstract

The authors report on the thermal activation of phosphorus doped p-type ZnO thin films grown by radio frequency magnetron sputtering. The p-type ZnO was produced by activating phosphorus doped ZnO thin films in N 2 , Ar, or O 2 ambients. The hole concentration of the p-type ZnO, prepared in an O 2 ambient, showed a lower hole concentration compared to samples annealed in N 2 and Ar ambients. The activation energies of the phosphorus dopant in the p-type ZnO under different ambient gases indicate that phosphorus atoms replace oxygen atoms in the ZnO to form P O which acts as an acceptor.

Photoluminescence of ZnO:Sb nanobelts fabricated by thermal evaporation method

“…The peaks located at 3.356 and 3.322 eV are attributed to A 0 X and FA transitions, respectively. Similar results were observed in P doped p-type ZnO thin film; the FA transition was observed at 3.320 eV [15,16]. Moreover, the peak at 3.236 eV is ascribed to donor-acceptor pair (DAP) transition.…”

Fabrication of As-doped p-type ZnO thin films using As2O3 as doping source material by E-beam evaporation

“…It is strongly believed that the peak observed at 3.35 eV is due to the emission bound to the As acceptor. According to the report by Hwang et al [15] of p-doped ZnO film grown by RF sputtering, the peak at 3.35 eV was assigned as (A 0 X) emission. The dominant peak located at 3.20 eV, corresponds to DAP transition.…”

The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition

“…Many efforts have been made to produce p-type ZnO by using different acceptor agents such as P, As, Sb and Li [4][5][6][7][8][9]. But the result of a first-principle calculation predicts that the N element is the best candidate for producing the p-type ZnO due to small strain effects and shallow acceptor levels of substitution of N for O [2,3].…”