Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

Jeon, Junhyub; Jeon, Dae Woo; Sahoo, Trilochan; Kim, Myoung; Baek, Jong Hyeob; Hoffman, Jessica Lynn; Kim, Nam Soo; Lee, In Hwan

doi:10.1016/j.jallcom.2011.08.033

Cited by 66 publications

(23 citation statements)

References 21 publications

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“…Indium-doped zinc oxide (IZO) thin films have been accomplished using different techniques, including spray pyrolysis [2]- [10], chemical vapor deposition [11], e-beam evaporation [12], pulsed laser deposition [13]- [15], and sputtering [16]- [20]. Most of these techniques require sophisticated instruments and/or high deposition temperature.…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

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Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

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Section: Introductionmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

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“…per n = 0.5, the using of vertical axis ( α hν) 2 verses of horizontal axis of photon energy (hν) . The results show that the energy gap decreases with increasing annealing temperature …”

Section: Resultsmentioning

confidence: 95%

Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe₂O₃) nanoparticle thin films

Parsianpour

Gholami

Shahbazi

et al. 2015

Surface & Interface Analysis

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In this study, maghemite (γ-Fe 2 O 3 ) nanoparticles were initially synthesized via chemical co-precipitation and then deposited by spray pyrolysis as thin films on white glass substrates. The thin films were annealed for 8 h at 400, 450, 500, 550, and 600°C in an oven. The structural studies of maghemite nanoparticles were carried out using X-ray diffractometer. Structural properties that we investigated by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, SEM, and Energy dispersive X-ray analysis (EDS). Optical properties of the samples were also investigated by ultraviolet-visible (UV-vis) spectroscopy. The results showed that maghemite nanoparticles have crystalline structure with domain that increases in size with increasing annealing temperature. The optical band gap values were found to reduce from 2.9 to 2.4 eV with increase in annealing temperature.

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“…However, the band gap of the as deposited SiO x -ZnO heterostructure nanocluster is found to be 2.94 eV due to the downward shift of the conduction band. The less band gap associated with many-body interactions between the carriers in the conduction band and valence band called bandgap renormalization [35]. However, after annealing, the optical band gap increases to 3.44 eV which is influenced by the change in charge carriers and can be explained by Burstein Moss (BM) effect [35].…”

Section: Zno Nanoclustermentioning

confidence: 99%

Effect of Annealing on Metal-Oxide Nanocluster

Singh¹,

Rajkumari²

2019

Concepts of Semiconductor Photocatalysis

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Recently, the development of optoelectronic devices based on metal-oxide nanocluster has attracted intensive research interest. Nanoclusters are suitable for these because of their large surface-to-volume ratio and the presence of abundant oxygen vacancies or trap states. Metal-oxides such as ZnO, In 2 O 3 , and TiO 2 synthesized using different technique produces high surface area films consisting of clusters and provides complete control over the film morphology. In this chapter, some of the metal oxides nanocluster film has investigated, and the effect of annealing on the structural, optical and electrical properties of the grown films when subjected to different annealing temperatures will be studied. Theoretically, these properties are presumed to improve after the heat treatment as the crystallinity, and the grain size of the film has increased due to the diminishing of oxygen vacancies. Thus, the greater surface-to-volume ratio, the better stoichiometry and higher level of crystallinity compared to bulk materials make nanocluster-based devices very promising for the mentioned application.

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Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

Cited by 66 publications

References 21 publications

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe₂O₃) nanoparticle thin films

Effect of Annealing on Metal-Oxide Nanocluster

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Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

Cited by 66 publications

References 21 publications

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe2O3) nanoparticle thin films

Effect of Annealing on Metal-Oxide Nanocluster

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Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe₂O₃) nanoparticle thin films