Effect of Annealing Temperature on Switching Characteristics of Zinc Oxide based RRAM Device

Gupta, C. P.; Jain, Prerna; Chand, Umesh; Sharma, Shashikant; Birla, Shilpi; Sancheti, S.

doi:10.1109/icitaet47105.2019.9170219

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…2. SIMNRA is mainly intended for the simulation of spectra with non-Rutherford backscattering cross-sections The SIMNRA simulation [15][16][17][18][19] is used to fit the spectrum and to determine the thickness of the film and zinc, oxygen atomic fraction. From the SIMNRA simulation, the zinc atomic fractions were estimated to be 60.0% and oxygen 40.0 % and Zinc oxide film thickness of 140 ± 10 nm.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications

Kaushik¹,

Pandey²,

Singhal³

2022

ECS J. Solid State Sci. Technol.

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This study looks at the results of resistive random-access memory (ReRAM) devices made by using structural layers of Gold (Au)/Zinc oxide (ZnO)/Indium tin oxide (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, the resistance ratio was found to be 102 at 1V. The device's switching properties improved after annealing. Rutherford backscattering spectrometry determined the thickness of the deposited zinc oxide layer to be approximately 140±10 nm. The zinc atomic fractions were calculated to be 60% and oxygen 40% by the SIMNRA simulation. The ZnO-based structures were also characterized and analyzed using X-ray powder diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The current study reveals that annealing improves the performance of ReRAM devices.

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Section: Resultsmentioning

confidence: 99%

“…As grown substrate was characterized for the surface characterization properties showing uniform and crack-free deposition of ZnO. 15,16 Gold 200 Å thick was placed by DC sputtering using a shadow mask. Before gold is deposited, a coating of titanium (15 nm) is deposited to make the gold more adherent to the annealed oxide layer.…”

Section: Methodsmentioning

confidence: 99%

Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications

Kaushik¹,

Pandey²,

Singhal³

2022

ECS J. Solid State Sci. Technol.

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“…As mentioned above, as the conductive filaments are generally composed of defects, such as Sn vacancies or O interstitials, the defect adjustment has a great impact on the switching behavior. There are representative methods for controlling the defect such as annealing treatment, which changes the phase of crystalline [ 17 , 18 , 19 , 20 ], and plasma treatment using chemical gases, like Ar [ 21 , 22 , 23 , 24 , 25 ], O 2 [ 26 , 27 , 28 ], and N 2 [ 29 , 30 ]. Far from an annealing process that can be engaged with the thermal budget issue with the CMOS fabrication process, plasma treatment that causes only small damage on the surface is certainly a useful processing technique.…”

Section: Introductionmentioning

confidence: 99%

Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State

et al. 2022

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The simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabricated an ITO/SnOX/TaN device and investigated the performance improvement with the treatment of O2 plasma. Firstly, the change in the forming curve was noticeable, and the defect adjustment was carried out effectively. By comparing the I–V curves, it was confirmed that the resistance increased and the current was successfully suppressed, making it suitable for use as a low-power consumption device. Retention of more than 104 s at room temperature was measured, and an endurance of 200 cycles was performed. The filaments’ configuration was revealed through the depth profile of X-ray photoelectron spectroscopy (XPS) and modeled to be visually observed. The work with plasma treatment provides a variety of applications to the neuromorphic system that require a low-current level.

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