Effect of Band-to-Band Tunneling on Junctionless Transistors

Gundapaneni, Suresh; Bajaj, Mohit; Pandey, Rishikesh; Murali, K. V. R. M.; Ganguly, Swaroop; Kottantharayil, Anil

doi:10.1109/ted.2012.2185800

Cited by 219 publications

(104 citation statements)

References 24 publications

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“…21 Using larger supply voltages could increase the leakage current and degrade the off-state performance of the devices. 22 A brief introduction of the simulation method that takes into account of the effective masses for arbitrarily oriented wires is discussed in Sec. III.…”

Section: Device Structures and Parametersmentioning

confidence: 99%

Influence of channel material properties on performance of nanowire transistors

Razavi

Fagas

Ferain

et al. 2012

Journal of Applied Physics

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Access to the full text of the published version may require a subscription. The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I on /I off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. V C 2012 American Institute of Physics. Rights

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Section: Device Structures and Parametersmentioning

confidence: 99%

Influence of channel material properties on performance of nanowire transistors

Razavi

Fagas

Ferain

et al. 2012

Journal of Applied Physics

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“…However, in the OFF-state, the heavily doped channel region in a JLFET is volume depleted, which results in a significant overlap of the conduction band of the drain region and the valence band of the channel region [3]. This band alignment facilitates the tunneling of electrons from the channel to the drain leaving behind holes in the channel region.…”

Section: Introductionmentioning

confidence: 99%

Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel

Kumar

Sahay

2016

IEEE Trans. Electron Devices

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In this brief, we demonstrate for the first time that the presence of a hybrid channel, which consists of a p + layer below the n + active device layer in a junctionless (JL) FET, leads to a drastically reduced BTBT-induced parasitic BJT action. Using calibrated 2-D simulations, we show that the JLFET with a p + layer [which we call hole sink (HS)] has a significantly low OFF-state leakage current due to an increased tunneling barrier width, an enhanced source-to-channel barrier height, and a better provision for collecting the band-to-band tunneling (BTBT) generated holes, which results in a diminished parasitic BJT action in the OFF-state. Further, the proposed HS JLFET shows an extremely high ON-state to OFF-state current (I ON /I OFF ) ratio of ∼10 7 for a channel length of 10 nm and a significant (I ON /I OFF ) ratio of ∼10 4 even for a channel length of 5 nm.Index Terms-Band to band tunneling (BTBT), hole sink (HS), junctionless transistor (JLFET), leakage current, parasitic bipolar junction transistor (BJT).

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“…The exacerbation of the depletion creates an overlap between the valence and conduction bands in the channel and the drain separately, which results in a tunneling of electrons between the two bands. This is the effect of band-to-band tunneling (BTBT) that leads to a significant leakage current in the OFF state [2]. It means that the higher doping concentration of silicon nanowire triggers larger effect of BTBT.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, some modeling results such as theoretical model of the JL silicon-on-insulator (SOI) FET [7] and a charge-based model of DG MOSFETs [8] have been reported. Some groups studied the OFF-state behavior of JLTs, and showed the effect of BTBT on JLT operating in volume depletion in OFF state [2]. In consideration of the significant influence of BTBT, it is necessary to propose an effective way to decrease it.…”

Section: Introductionmentioning

confidence: 99%

The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling

Wu¹,

Jin²,

Kwon³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of ntype double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.

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Effect of Band-to-Band Tunneling on Junctionless Transistors

Cited by 219 publications

References 24 publications

Influence of channel material properties on performance of nanowire transistors

Influence of channel material properties on performance of nanowire transistors

Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel

The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling

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