Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

Barrett, Caleb Shuan Chia; Martin, Thomas P.; Bao, Xinyu; Kennon, E. L.; Gutiérrez, Luis H.; Martin, Priscila Keiko Matsumoto; Sanchez, Errol; Jones, K. S.

doi:10.1016/j.jcrysgro.2016.06.021

Cited by 12 publications

(18 citation statements)

References 32 publications

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“…Same results were found in the research on the GaAs nucleation layer on GaP/Si (001): the TDD first decreased as the growth temperature increased from 400 to 500 °C, but when the growth temperature increased further to 550 °C, the TDD rose back to a high level [29]. Likewise, the findings in [23] showed that there was an optimal growth temperature to suppress APDs in MOCVD-grown GaAs on Si (001) by a two-step process. The reason is similar to the analysis for the cross-sectional and surface morphology.…”

Section: Crystal Structuresupporting

confidence: 77%

“…Therefore, it is important to find out the optimal growth parameters for the InP nucleation layer. Many researches have been performed focused on the influences of growth temperatures, thickness, and flow ratio of V/III sources of Ge [22] or GaAs [23] nucleation layer on Si, or InP nucleation layer on GaAs [24,25] or Si [26] by MOCVD. The findings of the above studies indicate that these parameters have significant impact on the growth behaviors, such as surface morphology and crystal quality.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Yang

et al. 2019

Coatings

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InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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Section: Crystal Structuresupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Yang

et al. 2019

Coatings

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“…Cross-section dark-field TEM images taken along the <110> direction using g = (002) reflection of GaP/Si(001) (S1) and GaP/GaPN/GaP/Si(001) (S2) heterostructures are presented in Figure a,b correspondingly. As was discussed in refs and , these parameters were chosen to provide contrast between APDs. The mosaic structure of the GaP film with an average lateral grain size of 50 nm is clearly seen in Figure a.…”

Section: Resultsmentioning

confidence: 59%

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

Bolshakov

Fedorov

Koval

et al. 2019

Crystal Growth & Design

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III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect on the crystal structure were investigated via analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data. Continuous redshift and a substantial increase in intensity of the photoluminescence emission spectra were observed upon increase of nitrogen content. The effect of antiphase disorder in GaP buffer on the GaPN epilayer properties was studied. It was found that antiphase boundaries, protruding from the GaP/Si to the GaPN/GaP heterointerface, change their orientation and self-annihilate in the dilute nitride layer even with a low (0.5%) nitrogen content.

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“…The {112} plane's formation energy is intermediate what makes these planes good candidates for the APB self‐annihilation . Experimentally it was shown that the self‐annihilation behavior and the resulting boundary planes can be influenced by the growth conditions, especially by the growth temperature …”

Section: Antiphase Domains: Formation Detection Quantification Andmentioning

confidence: 99%

“…This behavior highlights the influence of the growth temperature on the self‐annihilation of the APDs which was already shown in refs. . The APB sections marked in white correspond to higher index planes which have not been considered before.…”

Section: Antiphase Domains: Formation Detection Quantification Andmentioning

confidence: 99%

Advanced Electron Microscopy for III/V on Silicon Integration

Beyer

Volz

2019

Adv Materials Inter

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The combination of III/V semiconductors with Si is very attractive, since it allows the fabrication of high efficient optoelectronic devices like solar cells, lasers or the integration of III/V transistors on Si substrates. However, the growth of polar III/V materials on nonpolar Si holds several challenges. The different valences of group III and group V atoms as well as Si possibly give rise to the formation of charged defects, i.e., antiphase boundaries, as well as to charge accumulation at the interface between the different materials. Accordingly, the interfaces present, i.e., the ones between antiphase and main phase and the one between III/V and Si, eventually limit any device's performance. Electron microscopy, in particular transmission electron microscopy, has proven to be a valuable tool to acquire quantitative information from III/V–Si heterostructures. Among this information are defect densities as well as the structure of the involved interfaces at spatial resolutions down to the atomic level. Moreover, information on charge distribution can be retrieved. In this review, the authors collocate the results gained for the model system GaP on Si utilizing various electron microscopy related techniques.

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Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

Cited by 12 publications

References 32 publications

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

Advanced Electron Microscopy for III/V on Silicon Integration

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