2016
DOI: 10.1109/tasc.2016.2517189
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Effect of Diffusion Annealing and Design of Internal Tin Wires on the Structure and Morphology of Superconducting Nb3Sn Layers

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Cited by 13 publications
(3 citation statements)
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“…For the MF1980-12Zn reference wires heat treated at 670 °C, 700 °C and 730 °C, the calculated F p,max is about 3∼4 GN m −3 smaller than the MF1980-12Zn-0.2Mg specimens, which might be due to the larger grain size and larger area fraction of columnar grains in the Nb 3 Sn filaments. The columnar structure grains have higher fractions of low-angle grain boundaries, which are less efficient pins than the high-angle grain boundaries mainly formed in the equiaxial grains [24][25][26].…”
Section: Discussionmentioning
confidence: 99%
“…For the MF1980-12Zn reference wires heat treated at 670 °C, 700 °C and 730 °C, the calculated F p,max is about 3∼4 GN m −3 smaller than the MF1980-12Zn-0.2Mg specimens, which might be due to the larger grain size and larger area fraction of columnar grains in the Nb 3 Sn filaments. The columnar structure grains have higher fractions of low-angle grain boundaries, which are less efficient pins than the high-angle grain boundaries mainly formed in the equiaxial grains [24][25][26].…”
Section: Discussionmentioning
confidence: 99%
“…The grain size of conventional Nb 3 Sn is ∼200 nm. Recent investigations on Nb 3 Sn pinning characteristics suggest that the grain boundary of the coarse grain A15 phase does not have a significant impact on the pinning force and maximizing of the fine equiaxed grain area is essential for further J c improvement [15,[20][21][22]]. An internal oxidation technique using Nb-Zr alloys is now actively discussed as a technique to refine the grain morphology of the Nb 3 Sn layer [23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Cu-Zn/Sn diffusion reactions and void formation behaviors have also not yet been investigated in detail. In addition, there are only few studies on the influence of the Ti doping mode in the internal tin Nb 3 Sn strand so far [22,49]. It should be noted that there are exactly three paths for Ti doping in internal tin processes, i.e.…”
Section: Introductionmentioning
confidence: 99%