Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

Hsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen‐Chung

doi:10.1016/j.mee.2010.02.010

Cited by 14 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with the control device, reduced gate leakage current, as well as an increased breakdown voltage has been observed for the SiN CESL-strained device with or without gate stack fluorination. Since gate leakage current and breakdown voltage strongly depend on defect densities, a superior gate insulating property of the nMOSFETs with the SiN CESL and CFI process can be primarily attributed to defect density reduction (e.g., dangling bonds and oxygen vacancies) by hydrogen/nitrogen and fluorine atoms, respectively [ 19 , 27 ]. Although the fluorinated high-k dielectrics widely exhibits superior dielectric characteristics, due to the reduction of the oxygen vacancies and dangling bonds [ 27 , 28 ], further combining of the CFI process negligibly improves the as-fabricated electrical performance of the SiN CESL-strained nMOSFET in this paper, including transconductance, drain current, subthreshold swing, gate leakage current and breakdown voltage.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, the dielectric properties and device reliabilities of the MOSFETs can be improved by fluorine incorporation processes, such as fluorine plasma treatment, channel fluorine implantation (CFI), source/drain region fluorine implantation and fluorinated silicate glass (FSG) passivation [ 23 – 27 ]. Incorporating fluorine within high-k gate stacks can terminate interfacial dangling bonds and bulk oxygen vacancies during subsequent processes, which is useful to reduce gate leakage current and improve the charge-to-breakdown and V TH instability, as well [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Chen

2014

Materials

Self Cite

View full text Add to dashboard Cite

The channel fluorine implantation (CFI) process was integrated with the Si3N4 contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO2/SiON) gate stack. The SiN CESL process clearly improves basic electrical performance, due to induced uniaxial tensile strain within the channel. However, further integrating of the CFI process with the SiN CESL-strained nMOSFET exhibits nearly identical transconductance, subthreshold swing, drain current, gate leakage and breakdown voltage, which indicates that the strain effect is not affected by the fluorine incorporation. Moreover, hydrogen will diffuse toward the interface during the SiN deposition, then passivate dangling bonds to form weak Si-H bonds, which is detrimental for channel hot electron stress (CHES). Before hydrogen diffusion, fluorine can be used to terminate oxygen vacancies and dangling bonds, which can create stronger Hf-F and Si-F bonds to resist consequent stress. Accordingly, the reliability of constant voltage stress (CVS) and CHES for the SiN CESL uniaxial-strained nMOSFET can be further improved by the fluorinated HfO2/SiON using the CFI process. Nevertheless, the nMOSFET with either the SiN CESL or CFI process exhibits less charge detrapping, which means that a greater part of stress-induced charges would remain in the gate stack after nitrogen (SiN CESL) or fluorine (CFI) incorporation.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Chen

2014

Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…The inlet of the hydrogen flow was located placed below the incandescent filaments at a distance (filament source distance, fsd) of 6 mm, obtaining thus the volatile precursors that were deposited and adsorbed on the surface of the heated substrate below the quartz sources at a distance (source substrate distance, ssd) of 8 mm [ 27 , 28 ]. The deposition time (dt) for the S-L SRO films was 3 min, whereas, for the D-L SRO films, it was 5 min [ 27 , 28 , 29 , 30 , 31 , 32 , 33 ]. Once the SRO films were deposited, they were annealed at 1100 °C for 60 min in an N 2 environment.…”

Section: Methodsmentioning

confidence: 99%

“…Once the SRO films were deposited, they were annealed at 1100 °C for 60 min in an N 2 environment. Finally, the top contact placed on the film SRO was indium tin oxide (ITO); due to these films having good transparency and conductivity, for the deposit of ITO, the spray pyrolysis method was used [ 31 ] through a nebulizer at a deposition temperature of 450 °C. The ITO solution (0.2 M) was prepared in a methanol base containing indium chloride InCl 3 (Aldrich 99.9) and tin chloride pentahydrate SnCl 4 5H 2 O (Aldrich 98); the percentage of SnCl 4 5H 2 O was 8%.…”

Section: Methodsmentioning

confidence: 99%

Blue Electroluminescence in SRO-HFCVD Films

et al. 2021

View full text Add to dashboard Cite

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

show abstract

“…This material has evolved since DiMaria et al [1] observed electroluminescence in SRO for the first time, likewise, Leight Caham [2] by electrochemical etching obtained visible emission of porous silicon. Many topics of research have been investigating to obtain light emitters based on silicon and fully compatible with the existing Complementary Metal Oxide Silicon (CMOS) technology [3][4][5][6][7]. The SRO films have been manufactured by different techniques, the most common being the Chemical Vapor Deposition, such as LPCVD (Low-Pressure Chemical Vapor Deposition) [3,4,8,9], HFCVD (Hot Filament Chemical Vapor Deposition) [10][11][12][13], PECVD (Plasma-Enhanced Chemical Vapor Deposition) [14][15][16], sol-gel [14], silicon implantation in SiO 2 [4,5,8,9], and sputtering [17,18].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon

et al. 2020

View full text Add to dashboard Cite

This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment.

show abstract

Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

Cited by 14 publications

References 9 publications

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Blue Electroluminescence in SRO-HFCVD Films

Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon

Contact Info

Product

Resources

About