Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl₃ Dry Etching

Abstract

In this paper, we present the development of a mesa isolation process for AlSb/InAs high electron mobility transistors (HEMTs) using inductively coupled plasma (ICP) etching with BCl 3 gas. Devices with different gate lengths (L g : 60, 100, and 200 nm) fabricated by this dry etching technique show good DC and RF performances. With an appropriate L g /gate-channel distance ratio, the 200-nm-gate has very high peak transconductances of 781 mS/mm at V DS ¼ 0:1 V and 2000 mS/mm at V DS ¼ 0:5 V. Moreover, an extrinsic current gain cutoff frequency of

Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching

“…Compared to Cl 2 -based gases, adoption of BCl 3 gas in the dry etching process will lead to a well-controllable etching rate to obtain shallow mesa isolation. Detailed discussions can be found in our earlier work 10) Pd/Pt/Au ohmic contacts were evaporated and subsequently annealed at 340 C for 30 s in N 2 ambient, resulting in a low contact resistance of 1.81 mm and a sheet resistance of 1371 /sq. The Ti/Pt/ Au metal-line gate was formed by E-beam lithography and lift-off techniques.…”