In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl 3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (L SD) and gate length (L g) were investigated. The fabricated 80-nmgate-length p-channel device with 2-m L SD exhibited a maximum drain current of 86.2 mA/mm with peak transconductance (g m) of 64.5 mS/mm. The current gain cutoff frequency (f T) was measured to be 15.8 GHz when the device was biased at V DS ¼ À1:2 V and V GS ¼ 0:4 V.

In this paper, we present the development of a mesa isolation process for AlSb/InAs high electron mobility transistors (HEMTs) using inductively coupled plasma (ICP) etching with BCl 3 gas. Devices with different gate lengths (L g : 60, 100, and 200 nm) fabricated by this dry etching technique show good DC and RF performances. With an appropriate L g /gate-channel distance ratio, the 200-nm-gate has very high peak transconductances of 781 mS/mm at V DS ¼ 0:1 V and 2000 mS/mm at V DS ¼ 0:5 V. Moreover, an extrinsic current gain cutoff frequency of