Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl₃ Dry Etching

Abstract

In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl 3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (L SD) and gate length (L g) were investigated. The fabricated 80-nmgate-length p-channel device with 2-m L SD exhibited a maximum drain current of 86.2 mA/mm with peak transconductance (g m) of 64.5 mS/mm. The current gain cutoff frequency (f T) was measured to be 15.8 GHz when the device was biased at V DS ¼ À1:2 V and V GS ¼ 0:4 V.

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

“…19,20 These antimonide quantum wells have been used in Schottkybarrier p-FETs with good direct-current (DC) and microwave performance. 16,[21][22][23][24][25] In addition, (In) GaSb-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated and have the attractive advantage of much lower gate leakage current, which is necessary for lowpower logic circuits. [26][27][28] Implementation of III-V CMOS technology on large-scale Si wafers is a key requirement, and significant progress has been made in this area for both InGaAs n-channel and SiGe/Ge p-channel materials.…”