Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c‐plane sapphire by metal organic chemical vapor deposition

Xue, JunShuai; Zhang, J. C.; Yang, Longxing

doi:10.1002/pssc.200983864

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…To deal with this issue, the addition of IL is very useful. Recently, many researchers improved the crystal quality of GaN by the addition of ILs of different materials including Aluminum nitride (AlN) [20], Scandium Nitride (ScN) [21], and InGaN [22]. The ILs of these materials drastically reduced the clusters of TDs.…”

Section: Introductionmentioning

confidence: 99%

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Khan¹,

Lei²,

Chen³

et al. 2022

Mater. Res. Express

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Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, well-controlled growth of this material remains a challenge. In this work, the crystal quality of GaN grown by serpentine channel patterned sapphire substrates (SCPSS) is improved via introducing indium gallium nitride (InGaN) as an interlayer (IL). The closed stripes of GaN are grown by the modified design of SCPSS. Our results show that the crystal quality of GaN developed in the form of closed stripes is superior than conventionally grown counterpart. Transmission electron microscopy (TEM) revealed that the design of SCPSS controls all threading dislocations (TDs) while cathodoluminescence (CL) analysis showed that the closed stripes are relaxed and produce many TDs. Therefore, further control over the TDs was achieved by InGaN-IL. During the growth process, the temperature of GaN was reduced and 20 nm thick InGaN-IL was added at 800 ℃. The detailed characterization of our developed samples indicated that the additional use of InGaN-IL in SCPSS is very effective for improving the crystal quality of GaN. We anticipate that our findings will improve the current understanding about the growth of high-quality GaN towards efficient optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Khan¹,

Lei²,

Chen³

et al. 2022

Mater. Res. Express

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Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

Xue

Zhang

2014

Chin. Sci. Bull.

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Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

Kotani

Yamada

Ishiguro

et al. 2017

Journal of Applied Physics

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This paper investigates the gate leakage characteristics of in-situ AlN capped InAlN/AlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. It was revealed that the leakage characteristics of AlN capped InAlN/AlN/GaN heterostructures are strongly dependent on the growth temperature of the AlN cap. For an AlN capped structure with an AlN growth temperature of 740 °C, the leakage current even increased although there exists a large bandgap material on InAlN/AlN/GaN heterostructures. On the other hand, a large reduction of the gate leakage current by 4–5 orders of magnitudes was achieved with a very low AlN growth temperature of 430 °C. X-ray diffraction analysis of the AlN cap grown at 740 °C indicated that the AlN layer is tensile-strained. In contrast to this result, the amorphous structure was confirmed for the AlN cap grown at 430 °C by transmission electron microscopy. Furthermore, theoretical analysis based on one-dimensional band simulation was carried out, and the large increase in two-dimensional electron gas (2DEG) observed in Hall measurements was well reproduced by taking into account the spontaneous and piezo-electric polarization in the AlN layer grown at 740 °C. For the AlN capped structure grown at 430 °C, it is believed that the reduced polarization field in the AlN cap suppressed the penetration of 2DEG into the InAlN barrier layer, resulting in a small impact on 2DEG mobility and density. We believe that an in-situ grown AlN cap with a very low growth temperature of 430 °C is a promising candidate for high-frequency/high-power GaN-based devices with low gate leakage current.

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Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c‐plane sapphire by metal organic chemical vapor deposition

Cited by 3 publications

References 9 publications

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

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