Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

“…The idea of stacking several 2DEGs has been investigated conspicuously over the past two decades. Considerable work has been done on AlGaN/GaN-double-channels [4][5][6][7][8][9][10][11][12][13], AlN/GaN-double-channels [14,15], InAlN/GaNdouble-channels [16,17] and Al(Ga)N/GaN-multi-channels [1][2][3][18][19][20]. One of the main concerns regarding multichannel heterostructures based on AlGaN barriers is the lattice-mismatch-induced tensile strain, which limits the number of channels that can be grown before cracking.…”

Preface

“…As an alternative strategy to overcome the p-type problem, Liu et al [2] reviewed the progress in ZnO-based heterojunction ultraviolet light-emitting diodes (LEDs) and laser diodes (LDs) involving thin films and nanostructures. As important and representative wide bandgap semiconductors, III-nitrides have been widely and deeply investigated [3][4][5][6][7]. In this special issue, some innovations of the growth and processing technologies are laid out; for instances, pulsed metal organic chemical vapor deposition has been developed by Hao et al [3], and hydride vapor phase epitaxy, laser lift-off, and chemical mechanical polishing techniques have been modified in Zhang et al [4].…”

“…As important and representative wide bandgap semiconductors, III-nitrides have been widely and deeply investigated [3][4][5][6][7]. In this special issue, some innovations of the growth and processing technologies are laid out; for instances, pulsed metal organic chemical vapor deposition has been developed by Hao et al [3], and hydride vapor phase epitaxy, laser lift-off, and chemical mechanical polishing techniques have been modified in Zhang et al [4]. Based on their improved techniques, the high-quality materials, such as GaN, InN, InAlN, and AlGaN were obtained, and the corresponding advanced devices, such as high electron mobility transistor, vertical structure LEDs, and LDs, were successfully fabricated.…”