Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack

Ruan, Dun-Bao; Liu, Po–Tsun; Chiu, Yu-Chien; Kuo, Po-Yi; Yu, Min‐Wen; Kan, Kai Zhi; Chien, Ta Chun; Chen, Yi Heng; Sze, Simon M.

doi:10.1016/j.tsf.2018.05.024

Cited by 18 publications

(9 citation statements)

References 18 publications

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“…In addition to the traditional purpose of TFTs of display driving arrays, efforts have been made to implement integrated circuits (ICs) using metal-oxide TFTs. The extremely low leakage current and high uniformity enable circuits with a high level of integration [16,17]. Furthermore, a new type of electronic device using metal oxides has been developed recently [18,19].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.

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Section: Introductionmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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“…Among of them, gallium oxide (Ga 2 O 3 ) is well-known for its wide bandgap (E g ~ 4.9 eV), high dielectric constant, and compatible fabrication since it can be fabricated at room temperature 19–21 . In addition, gallium (Ga) is commonly used in the display industry to control the oxygen vacancy in the InGaZnO material due to its ease of combination with oxygen ions 22 . Therefore, Ga 2 O 3 can be considered as one of the promising candidates for RRAM devices.…”

Section: Introductionmentioning

confidence: 99%

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan

Liu

Chien

et al. 2019

Sci Rep

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The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

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“…42 Besides, the multilayer gate insulator structure can effectively improve the hysteresis of the TFT device by its heterostructure with large conduction band offset between HfO 2 and TiO 2 . 32 However, all the TFT devices have been applied with the same gate insulator stacks, which also show similar capacitance values. Therefore, the sample with SCCO 2 + H 2 O 2 treatment exhibits an extremely low value of hysteresis (<47 mV), which can be attributed to the interface quality improvement and bulk trap passivation by the forceful oxidative cosolvent.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…It was reported that the multilayer GI structure was conducive to reducing the gate leakage current and increasing the effective dielectric constant without any annealing process. 32 Sequentially, the IWO active layer was formed with the optimized condition and followed by the different post-treatments (SCF or vapor) mentioned above. Afterward, in order to achieve high-conductivity metal contact and a relatively low work function, the drain (D) and source (S) electrodes were deposited with a 300 nm-thick aluminum layer using a thermal coater.…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

“…Then, a 60 nm-thick TaN layer was deposited and patterned as the metal gate electrode by direct current (DC) sputtering with a 100 sccm/10 sccm Ar/N 2 gas flow and a power of 800 W. After the bottom-gate formation, the multilayer high κ gate dielectrics, 5 nm-thick SiO 2 , 25 nm-thick TiO 2 , 30 nm-thick HfO 2 , and 5 nm-thick SiO 2 , were stacked as the gate insulator (GI) by electron gun evaporation. It was reported that the multilayer GI structure was conducive to reducing the gate leakage current and increasing the effective dielectric constant without any annealing process . Sequentially, the IWO active layer was formed with the optimized condition and followed by the different post-treatments (SCF or vapor) mentioned above.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

Ruan

Liu

et al. 2019

ACS Appl. Mater. Interfaces

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In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 1011 eV–1 cm–2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm2/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 107 can be achieved with at least four orders of magnitude enhancement by this unique treatment.

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Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack

Cited by 18 publications

References 18 publications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

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