Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

Dhar, Sarit; Song, Youngsik; Feldman, L. C.; Isaacs-Smith, T.; Tin, C. C.; Williams, John R.; Chung, Gil Yong; Nishimura, Tomoaki; Starodub, D.; Gustafsson, T.; Garfunkel, Eric

doi:10.1063/1.1651325

Cited by 75 publications

(44 citation statements)

References 16 publications

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“…The mobility was remarkably enhanced to 200 cm 2 /Vs or even higher by process optimization [11], [12]. After effects of interface nitridation were discovered for 4H-SiC (0001) MOS structures [13], [14], similar improvement by nitridation was reported for n-channel [15], [16] and p-channel [17] 4H-SiC (1120) MOSFETs. However, fundamental studies on SiC MOS structures formed on (1120) are still limited, and interface properties and channel mobility of SiC (1100) MOS structures are not well understood.…”

Section: Introductionmentioning

confidence: 64%

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Nakazawa

Okuda

Suda

et al. 2015

IEEE Trans. Electron Devices

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Interface properties of 4H-SiC (1120) and (1100) metal-oxide-semiconductor (MOS) structures annealed in nitric oxide are characterized by conductance, high-low, and C-ψ s methods. Compared with 4H-SiC (0001) MOS structures, generation of very fast interface states by nitridation is much smaller in 4H-SiC (1120) and (1100). The effective mobility of planar MOSFETs fabricated on Al + -implanted p-body doped to 1×10 17 cm −3 is 103 cm 2 /Vs on (1100), 92 cm 2 /Vs on (1120), and 20 cm 2 /Vs on (0001). The mobility-limiting factors are discussed on the basis of experimental results. The high channel mobilities for (1120) and (1100) MOSFETs can be correlated with the lower density of fast interface states generated by nitridation.Index Terms-Channel mobility, fast interface states, interface state density, nonpolar face, silicon carbide.

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Section: Introductionmentioning

confidence: 64%

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Nakazawa

Okuda

Suda

et al. 2015

IEEE Trans. Electron Devices

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“…Using the conductance method, 23 the interface state density ͑D it ͒ of 2.0ϫ 10 12 cm −2 eV −1 has been obtained at E C -E T = 0.2 eV, which is consistent with reported results in the literature. [24][25][26] C. Leakage current characteristics Figure 4 shows the leakage current characteristics of a typical Al/ TiO 2 / SiO 2 / SiC MIS structure. At positive bias, the capacitor sustains voltages exceeding 18.0 V without breakdown, which corresponds to an electric field strength of 1.8 MV/ cm in the stack dielectric.…”

Section: B Capacitance-voltage and Conductance-voltage Characteristicsmentioning

confidence: 99%

Leakage current and charge trapping behavior in TiO2∕SiO2 high-κ gate dielectric stack on 4H-SiC substrate

Mahapatra¹,

Chakraborty²,

Poolamai³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The TiO2∕SiO2 gate dielectric stack on 4H-SiC substrate has been studied as a high-κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric TiO2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of TiO2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer.

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“…Alternatively, nitridation of the SiO /SiC interface has emerged as the most effective solution to reduce the pre-irradiation interface trap densities. Nitridation via post-oxidation annealing in NO results in significant reduction of D ( 10 cm eV at 0.1 eV) and subsequently improves channel mobility [7]- [10]. For applications in radiation environments, it is important to study the radiation tolerance of 4H-SiC MOS devices.…”

Section: Introductionmentioning

confidence: 99%

Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors

Dixit

Dhar

Rozen

et al. 2006

IEEE Trans. Nucl. Sci.

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The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO 2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO 2 /Si and SiO 2 /SiC are responsible for the observed dissimilarities in charge trapping behavior.

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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

Cited by 75 publications

References 16 publications

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Leakage current and charge trapping behavior in TiO2∕SiO2 high-κ gate dielectric stack on 4H-SiC substrate

Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors

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