Hf 1-x Ti x O 2 dense ceramics were prepared by a standard solid-state reaction process, and the microwave dielectric properties in a wide frequency range were determined together with structure evolution. With increasing x, the structure gradually changed from HfO 2 -based solid solution (monoclinic in space group P2 1 /c, x ≤ 0.05) to HfTiO 4 (orthorhombic in space group Pbcn, x = 0.5), and the two phase regions were determined for 0.1 ≤x < 0.5 and x = 0.55. The microwave dielectric properties of HfO 2 ceramics at 10 GHz were determined as ε r = 14, Qf = 24 500 GHz, τ f = -50 ppm/°C. With Ti-substitution, the microwave dielectric characteristics, especially the Qf value, could be significantly improved, and the best combination of microwave dielectric characteristics was achieved at x = 0.05: ε r = 17, Qf = 84 020 GHz (at 7.8 GHz) and 151 260 GHz (at 27.9 GHz), and τ f = -47 ppm/°C. The smallest temperature coefficient of resonance frequency (τ f = -4.8 ppm/°C) was obtained for x = 0.55 together with a Qf value of 52 370 GHz at 5.0 GHz and 60 390 GHz at 17.9 GHz, where the dielectric constant was 40. Moreover, Hf 1-x Ti x O 2 microwave dielectric ceramics might be very competitive in the future of mobile communication technology due to their excellent compatibility with Si.