Effect of single metal doping on the thermoelectric properties of SnTe

Aminzare, M.; Tseng, Yu‐Chih; Ramakrishnan, Anbalagan; Chen, Kuei‐Hsien; Mozharivskyj, Yurij

doi:10.1039/c8se00385h

Cited by 25 publications

(19 citation statements)

References 41 publications

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“…Fig. 4(b) summaries the hardness of some IV-IV thermoelectric compounds [16,[27][28][29]. The HG-SnSe samples show hardness similar to previously reported value [12], which can be attributed to the similar microstructrues of these bulks.…”

Section: Resultssupporting

confidence: 75%

Greatly enhanced mechanical properties of thermoelectric SnSe through microstructure engineering

Bin-hao¹,

Chen²,

Zhao³

et al. 2023

Journal of Advanced Ceramics

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The outstanding thermoelectric materials SnSe is also known for its inferior mechanical properties, which bring great inconvenience for its application in thermoelectric devices. In this work, SnSe bulks were prepared via a sequential procedure of high-pressure synthesis, ball milling, and spark plasma sintering. The produced polycrystalline samples with a unique microstructure of tightly-bound quasi-equiaxed grains exhibited excellent mechanical properties. The Vickers hardness, compressive strength, and bending strength reached 1.1 GPa, 300 MPa, and 90 MPa, respectively, all of which are far superior to those of ordinary polycrystalline SnSe. Furthermore, the microstructures didn't deteriorate the thermoelectric performance. This work demonstrated an effective procedure to prepare polycrystalline microstructure-engineered SnSe materials, which not only show advantages in device applications, but also shed light on properties enhancement for other layer-structured thermoelectric materials.

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Section: Resultssupporting

confidence: 75%

Greatly enhanced mechanical properties of thermoelectric SnSe through microstructure engineering

Bin-hao¹,

Chen²,

Zhao³

et al. 2023

Journal of Advanced Ceramics

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“…In addition, an all-time high Vickers microhardness value of 165 Hv is reported (Figure (f)). This value is by far higher than previously reported in other high performance SnTe-based works and is graphically presented in Figure S8. ,,− This is thought to be contributed to by reduced Sn vacancies, precipitate hardening, and solid-solution strengthening which not only introduces strain but also alters bonding with Sb co-doping. The observed enhancement of the thermoelectric performance in SnTe through Cu and Sb co-doping continue to portray the potential of SnTe-based materials for application as mitigators for global climatic changes through emission-free recovery of waste heat to useful electrical power.…”

Section: Results and Discussionmentioning

confidence: 59%

Ultralow Lattice Thermal Conductivity and Enhanced Mechanical Properties of Cu and Sb Co-Doped SnTe Thermoelectric Material with a Complex Microstructure Evolution

Kihoi

Shenoy

Kahiu

et al. 2022

ACS Sustainable Chem. Eng.

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SnTe is an exceptionally promising eco-friendly thermoelectric material that continues to draw immense interest as a source of alternative energy recovered from waste heat energy. Here, we investigate the effect of introducing Cu as a single doping element rather than phase separated in SnTe followed by Sb co-doping to tune the lattice thermal conductivity. A microstructure evolution was observed which influences the thermoelectric performance of these SnTe-based materials. An overall power factor of ∼22 μW/cmK 2 and an ultralow lattice thermal conductivity of 0.39 W/mK are reported. A maximum ZT of 0.86 is also reported with an all-time record high hardness value of 165 Hv among SnTe-based thermoelectric materials. Through DFT calculations, we show that Cu opens the band gap of SnTe, whereas Sb in the presence of Cu introduces resonance levels and causes band convergence. This kind of enhanced thermoelectric performance is paramount for the application of SnTe in recovery of heat into useful electrical energy.

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“…Similar to that of Zr‐doping, the apparition of the secondary phase at higher Ti‐content confirms that the solubility limit of Ti in SnTe is crossed at x = 0.05. This solubility limit of x ≤ 0.04 for Ti or Zr in SnTe is much higher when compared to dopants such as Co or Ni, [ 62 ] and similar to that of dopants such as Ge, [ 62 ] In, [ 59 ] and lower compared to dopants such as Sb, [ 63 ] Mn, [ 27 ] Ca. [ 37 ]…”

Section: Resultsmentioning

confidence: 99%

“…Similar to that of Zr-doping, the apparition of the secondary phase at higher Ti-content confirms that the solubility limit of Ti in SnTe is crossed at x = 0.05. This solubility limit of x ≤ 0.04 for Ti or Zr in SnTe is much higher when compared to dopants such as Co or Ni, [62] and similar to that of dopants such as Ge, [62] In, [59] and lower compared to dopants such as Sb, [63] Mn, [27] Ca. [37] A representative SEM-EDX chemical/elemental mapping of the Sn 0.98 Zr 0.02 Te sample presented in Figure 4 reveals the compositional micro-homogeneity, particularly the dopant's uniform distribution in the SnTe material without any aggregation.…”

Section: Crystal Structure and Sample Purity Of Ti And Zr-doped Snte Compoundsmentioning

confidence: 99%

Physical Insights on the Lattice Softening Driven Mid‐Temperature Range Thermoelectrics of Ti/Zr‐Inserted SnTe—An Outlook Beyond the Horizons of Conventional Phonon Scattering and Excavation of Heikes’ Equation for Estimating Carrier Properties

Muchtar

Srinivasan

Tonquesse

et al. 2021

Advanced Energy Materials

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Most of the best known SnTe‐based materials exhibit an attractive thermoelectric figure of merit (zT) only at the high‐temperature regime, but their performance at the low‐mid temperature ranges is quite uninspiring, and this discordance necessitates a large temperature gradient (∆T ≥ 550 K) to effectuate a reasonable efficiency, η. Here, the transition elements, Ti and Zr, that have not been used in the past are tried as dopants for SnTe and an enhanced device/average zT and/or η are reported with a lower ∆T ≈ 400 K and without the requisite for a stupendous peak/maximum zT. This notable performance emanates from—i) improved weighted mobility by optimally balancing between effective mass, carrier concentration, and mobility, ii) coupling of charge carriers with magnetic entropy, and the paramount factor being the iii) weakening of the chemical bonds (lattice softening). The thermal damping caused by lattice softening affects the phonon group velocity and the elastic properties, and the resultant increase in the degree of anharmonicity and the high density of internal strain‐fields, along with the phonon scattering effects, play an active role in tuning the overall thermoelectric performance. This work also excavates/opens up the discussion of applying the Heikes’ equation to qualitatively compare the trend of charge carriers for a given thermoelectric material system.

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Effect of single metal doping on the thermoelectric properties of SnTe

Abstract: SnTe, a lead-free chalcogenide-based material, shows potential to achieve high thermoelectric performance.

Cited by 25 publications

References 41 publications

Greatly enhanced mechanical properties of thermoelectric SnSe through microstructure engineering

Greatly enhanced mechanical properties of thermoelectric SnSe through microstructure engineering

Ultralow Lattice Thermal Conductivity and Enhanced Mechanical Properties of Cu and Sb Co-Doped SnTe Thermoelectric Material with a Complex Microstructure Evolution

Physical Insights on the Lattice Softening Driven Mid‐Temperature Range Thermoelectrics of Ti/Zr‐Inserted SnTe—An Outlook Beyond the Horizons of Conventional Phonon Scattering and Excavation of Heikes’ Equation for Estimating Carrier Properties

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