Effect of trench edge on pMOSFET reliability

Lee, Yung-Huei; Linton, T.; Wu, K.; Mielke, N.

doi:10.1016/s0026-2714(01)00002-6

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…This implies, however, that W T can not be extracted using our methodology. At the same time, a weak dependence of the results on the position across the channel W T , together with an insignificant impact of the vertical trap position on the V th (V d ) dependence [22], means that the impact of shallow trench isolation [28] on our results is negligible as well. The V th values induced by the traps situated in each particular position were evaluated as a function of V d for all 100 devices using I d -V g curves simulated with and without charged traps.…”

Section: Tcad Simulationsmentioning

confidence: 76%

Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs

Illarionov

Bina

Tyaginov

et al. 2015

IEEE Trans. Electron Devices

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A novel method for the extraction of the lateral position of border traps in nanoscale MOSFETs is presented. Using technology computer-aided design (TCAD) simulations, we demonstrate that the dependence of the trap-induced threshold voltage shift on the drain bias is more sensitive to the lateral trap position than to the impact of random dopants. Based on this, the lateral defect position can be determined with a precision of several percent of the channel length. To demonstrate the correct functionality of our technique, we apply it to extract the lateral positions of experimentally observed traps. Although the most accurate algorithm is based on time-consuming TCAD simulations, we propose a simplified analytic expression, which allows for the extraction of the lateral trap position directly from the experimental data. While the uncertainty introduced by random dopants is <10% for the TCAD model, the additional errors introduced by the simple analytic expression still provide trap positions accurate to 5% for the devices with 20-nm channel length and 20%-25% for 100-nm-long devices.

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Section: Tcad Simulationsmentioning

confidence: 76%