Effects of oxygen partial pressure during sputtering growth on physical properties of Zn0.93Mn0.07O thin films

Lee, Sejoon; Lee, Hye-Sung; Hwang, Sun Jae; Shon, Yoon; Kim, Deuk Young; Kim, E.K.

doi:10.1016/j.jcrysgro.2005.10.012

Cited by 19 publications

(5 citation statements)

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“…PL of ZnMnO was either not observed or consisted of a broad emission [18] or of a weak excitonic lines [19,20]. In all the cases the PL was rather weak, which led to the opinion that Mn acts as a "killer" of a visible PL in ZnO [11,20].…”

Section: Discussionmentioning

confidence: 99%

Optical properties of manganese doped wide band gap ZnS and ZnO

et al. 2009

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Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization.Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.

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Section: Discussionmentioning

confidence: 99%

Optical properties of manganese doped wide band gap ZnS and ZnO

et al. 2009

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“…[7][8][9][10][11] The thickness of SI-films was ϳ700 nm, and the penetration depth of As dopants after completing the ion implantation process was confirmed to be ϳ520 nm by measurements of secondary ion mass spectroscopy. To obtain p-͑Zn 0.93 Mn 0.07 ͒O layers, as a primary task, high dose As + ͑1.0ϫ 10 16 cm −2 ͒ ions were implanted with low energy ͑70 keV͒ into SI-͑Zn 0.93 Mn 0.07 ͒O thin films, which had been grown on Al 2 O 3 ͑0001͒ substrates by reactive rf magnetron sputtering under gas mixture of Ar and O 2 .…”

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confidence: 90%

Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

et al. 2010

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Enhanced indirect ferromagnetic p-d exchange coupling of Mn in oxygen rich ZnO:Mn nanoparticles synthesized by wet chemical method J. Appl. Phys. 111, 033503 (2012); 10.1063/1.3679129High temperature carrier controlled ferromagnetism in alkali doped ZnO nanorods Enhanced ferromagnetism was observed from the H 2 O 2 -treated p-type ͑Zn 0.93 Mn 0.07 ͒O : As layer. Compared with the untreated sample, the H 2 O 2 -treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample ͑T C ϳ 280 K͒, the H 2 O 2 -treated sample exhibited to have the increased T C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H 2 O 2 -treated sample.

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“…The growth kinetics and material properties in detail of the semi-insulating (Zn 0.93 Mn 0.07 )O layer were described in our previous reports [4,5]. The As + ion implantation into the semi-insulating (Zn 0.93 Mn 0.07 )O layer was performed at the beam acceleration energy of 70 keV, and the dose of As + ion was 1.0 × 10 16 cm − 2 .…”

Section: Methodsmentioning

confidence: 99%