Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

Basu, Sarbani; Singh, Pramod K.; Lin, S. Y.; Sze, Po-Wen; Wang, Yeong-Her

doi:10.1109/ted.2010.2071130

Cited by 20 publications

(10 citation statements)

References 29 publications

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“…Although introducing a gate dielectric in an AlGaN/ GaN High Electron Mobility Transistor (HEMT) can effectively reduce the gate leakage and increase the I on /I off ratio, [1][2][3][4][5][6][7][8] some of the problems in conventional HEMTs may still be lingering in the resulting Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs). One example is the so called "current collapse" phenomenon, decreases in drain current (I d ) and transconductance (G m ) under pulsed or high frequency conditions, which can be efficiently suppressed for HEMT devices as long as their access regions are properly passivated.…”

Section: And T P Mamentioning

confidence: 99%

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Sun

Saadat

Chang-Liao

et al. 2013

Applied Physics Letters

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We introduce an ac-transconductance method to profile the gate oxide traps in a HfO 2 gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures.

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Section: And T P Mamentioning

confidence: 99%

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Sun

Saadat

Chang-Liao

et al. 2013

Applied Physics Letters

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“…Because of its low leakage current, wide bandgap and relatively low value of dielectric constant, Al 2 O 3 (alumina) is considered to be an appropriate insulator for several electronic and electro-optical applications. Al 2 O 3 have been employed in several devices ranging from gate dielectric in metal-oxide-semiconductor transistors to trapping or blocking insulator in charge trapping nonvolatile memory cells and scaffold layer in perovskite solar cells [1][2][3][4][5][6]. It is well known that different metastable polymorphs of Al 2 O 3 exist (like α, γ, η, δ, θ, χ and amorphous phases) in addition to the thermodynamically stable α-Al 2 O 3 form [7,8].…”

Section: Introductionmentioning

confidence: 99%

Interfacial engineering of mp-TiO2/CH3NH3PbI3 with Al2O3: Effect of different phases of alumina on performance and stability of perovskite solar cells

Zadeh

Zarandi

2021

Journal of Materials Research

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In this paper, α, γ and amorphous Al 2 O 3 were deposited on mesoporous TiO 2 by spin coating technique. Among the phases of alumina used for coating the TiO 2 layer, photo anode electrode prepared by γ-Al 2 O 3 showed better photovoltaic properties than those covered by α and amorph-Al 2 O 3 . The perovskite solar cells which constructed by surface passivated TiO 2 films showed worse performance and stability than the unpassivated devices. Also, using the amorphous phase of alumina as substrate of perovskite in the structure of perovskite solar cells leads to lower solar cell stability (remain about 49% of efficiency after 70 days) compared to using α and γ-Al 2 O 3 as substrate of perovskite (remain about 68% of efficiency after 70 days). Our findings provide vital understanding to improve the performance and stability of TiO 2 -and Al 2 O 3 -based perovskite solar cells.

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“…In order to overcome this problem MOSHEMT technology came into picture which includes an oxide layer between gate and AlGaN barrier layer. The oxide layer may be SiO 2 [3], Al 2 O 3 [4], TiO 2 [5] or HfO 2 [6].…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

et al. 2015

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Oxide dielectric present in metal oxide semiconductor high electron mobility transistor plays an important role during formation of two dimensional electron gas (2DEG). The sheet charge concentration (n s ) is dependent on the Eigenenergy states present in triangular quantum well at AlGaN/GaN interface. The energy states are in fact functions of vertical electric field at the edge of the well. Therefore in this paper a model is developed to find out Electric field and flat-band voltage (V T ) by adopting energy band approach to incorporate oxide parameters in it unlike the conventional method of solving Poisson's equation, which is the uniqueness of this paper. The Eigenenergy states are dependent non-linearly on electric field. In the present case, three quantum states in the well are considered along with the Fermi-Dirac distribution function to obtain n s . The dependence of 2DEG density, electric field and flat-band voltage on the oxide parameters such as thickness and electrical permittivity is analyzed. With respect to thickness in SiO 2 and Al 2 O 3 , n s shows inverse relationship; whereas in HfO 2 it is direct due to positive charges accumulated at oxide/barrier interface. To the best of author's knowledge the work is first of its kind and due to lack of experimental data; the obtained results are compared with TCAD results to validate the model.

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Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

Cited by 20 publications

References 29 publications

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Interfacial engineering of mp-TiO2/CH3NH3PbI3 with Al2O3: Effect of different phases of alumina on performance and stability of perovskite solar cells

Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

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