Effects of Work-function Variation on Performance of Junctionless and Inversion-mode Dual-metal Gate Nanowire Transistors

Dai, Lulu; Lü, Weifeng; Lin, Mi

doi:10.5573/jsts.2020.20.4.349

Cited by 1 publication

(2 citation statements)

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“…The enhancement of DIBL, V th roll-off and SS is directly contributed by the metal-gate workfunction tuning [7]. Dai et al (2020) have also reported that tuning the metal-gate workfunction is the key factor in achieving better output properties of junction-less transistor [5].…”

Section: Introductionmentioning

confidence: 99%

“…However, it is widely known that the SS of a MOSFET is notoriously difficult to minimize at room temperature, owing to the fact that its operation is reliant on thermionic carrier injection [1]. Junction-less ultrathin channel transistors may be a potential option for a next-generation low-power device due to its low SS at room temperature and strong complementary MOS (CMOS) process compatibility [2][3][4][5]. Nevertheless, there are still several hurdles to overcome before commercialization, including leakage current from unwanted drain-side tunneling and poor I ON .…”

Section: Introductionmentioning

confidence: 99%

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Analogue properties of junction-less strained dg-mosfet

Tomasz

Andrej

2022

ETN

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This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking the dependency of analogue properties on the WF tuning into account. Numerical simulation was performed using industrial-based process/device simulator, Silvaco TCAD tools. The simulation results revealed that analogue properties of the device such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd) and early voltage (VEA) exhibited an increase of ~17.4%, ~104.7%, 96% and 69.4% respectively as the WF is slightly minimized. However, the output impedance (ro), and intrinsic gain (AV) were deteriorated for ~58.4% and ~16.2% respectively as the WF is slightly minimized.

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Section: Introductionmentioning

confidence: 99%