Efficiency limiting bulk recombination in multicrystalline silicon solar cells

Michl, Bernhard; Rüdiger, Marc; Giesecke, Johannes; Hermle, Martin; Warta, Wilhelm; Schubert, Martin C.

doi:10.1016/j.solmat.2011.11.047

Cited by 76 publications

(36 citation statements)

References 12 publications

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“…[ 77 ] The spatially resolved minority carrier lifetime after gettering was evaluated for samples from adjacent ingot heights and thus sharing the same crystal defect structure by microwave photoconductive decay with iodine ethanol surface passivation. The resulting harmonic root mean minority carrier lifetime, τ av , a strong predictor of cell effi ciency, [80][81][82] and calculated as…”

Section: Process Optimization Resultsmentioning

confidence: 99%

Darwin at High Temperature: Advancing Solar Cell Material Design Using Defect Kinetics Simulations and Evolutionary Optimization

Fenning

Hofstetter²,

Morishige³

et al. 2014

Advanced Energy Materials

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Material defects govern the performance of a wide range of energy conversion and storage devices, including photovoltaics, thermoelectrics, and batteries. The success of large‐scale, cost‐effective manufacturing hinges upon rigorous material optimization to mitigate deleterious defects. Material processing simulations have the potential to accelerate novel energy technology development by modeling defect‐evolution thermodynamics and kinetics during processing of raw materials into devices. Here, a predictive process optimization framework is presented for rapid material and process development. A solar cell simulation tool that models defect kinetics during processing is coupled with a genetic algorithm to optimize processing conditions in silico. Experimental samples processed according to conditions suggested by the optimization show significant improvements in material performance, indicated by minority carrier lifetime gains, and confirm the simulated directions for process improvement. This material optimization framework demonstrates the potential for process simulation to leverage fundamental defect characterization and high‐throughput computing to accelerate the pace of learning in materials processing for energy applications.

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Section: Process Optimization Resultsmentioning

confidence: 99%

Darwin at High Temperature: Advancing Solar Cell Material Design Using Defect Kinetics Simulations and Evolutionary Optimization

Fenning

Hofstetter²,

Morishige³

et al. 2014

Advanced Energy Materials

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“…In the meanwhile, this TEM image confirms that the Al2O3 film deposited by self-developed non-vacuum spatial ALD is quite uniform. substantially affects the V oc in multi-crystalline materials [27]. Three equations which can describe the relation between minority carrier lifetime and V oc can be expressed by: Table 2 Photovoltaic performance for PERC cells with various rear-side passivation films…”

Section: Methodsmentioning

confidence: 99%

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Lien¹,

Yang²,

Wu³

et al. 2016

Nano Online

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. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system, nano Online (2016). DOI: https://doi.org/10.1515/nano.11671_2015.154Originally published in: Shui-Yang Lien, Chih-Hsiang Yang, Kuei-Ching Wu, Chung-Yuan Kung. Investigation on the passivated Si/Al2O3 interface fabricated by nonvacuum spatial atomic layer deposition system, Nanoscale Research Letters. 10 (2015). DOI: https://doi.org/10.1186/s11671-015-0803-9Lien et al., 2015. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm2, fill factor of 0.776, and the efficiency of 19.18% can be achieved.Keywords: PERC; Non-vacuum spatial atomic layer deposition; Al2O3/SiNx:H stacked rear passivation; Blister; Triple-layer SiO2/Al2O3/SiNx ; H stacked passivation films BackgroundFor the past decade years, dielectric films have become promising materials applied in high-efficiency silicon solar cells due to their superior surface passivation effect.An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2-4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and unif...

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“…The majority of the electronics industry relies on the use of a thermally grown silicon dioxide layer to passivate the surface due to the low defect states at the interface [8]. The industries have moving towards to use thinner wafers for fabrication of solar cells to reduce cost [9] The effect of surface recombination in the efficiency of solar cells is shown in fig 2(d).Surface recombination is the important parameter which affects the performance of the solar cells. Multi-crystalline silicon solar cells are modelled and simulated using PC1D software.…”

Section: IIImentioning

confidence: 99%

Role of surface recombination in multi-crystalline silicon solar cells

Pugazhenthi¹,

Vigneshwaran²

2014

IOSRJAP

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Multi-crystalline silicon solar cell was fabricated using crystalline p-substrates with emitter front contact of n-type crystalline silicon. This paper reviews that an efficiency of the Multi-crystalline silicon solar cell which was analysed to demonstrate the surface recombination of the substrate that affects the performance of the solar cell, was investigated in detail by computer simulation using PC1D software. The surface recombination was found to be a key factor to affect the performance of the solar cell. A detailed simulation studies were analysed. Accordingly, the optimization of the multi-crystalline silicon solar cell on c-Si substrates was provided.

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Efficiency limiting bulk recombination in multicrystalline silicon solar cells

Cited by 76 publications

References 12 publications

Darwin at High Temperature: Advancing Solar Cell Material Design Using Defect Kinetics Simulations and Evolutionary Optimization

Darwin at High Temperature: Advancing Solar Cell Material Design Using Defect Kinetics Simulations and Evolutionary Optimization

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Role of surface recombination in multi-crystalline silicon solar cells

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