EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K

Abstract

The light-emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. The p-n junction is completely solution regrown. The highly compensated p region gives rise to a wide active region up to 50 μ in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied.

Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

“…As a support for this explanation, Si is known to be incorporated as an acceptor in the liquid phase epitaxy ͑LPE͒ where the growth of a GaAs crystal is carried out in a Ga-rich atmosphere. 33 In a preliminary study by photoluminescence measurements of these Si-doped epilayers, we also found peaks corresponding to Si donors and Si acceptors. At the normal growth temperature of MBE, the growth surface is maintained as an Asstabilized one even if the resulting epilayer is stoichiometric.…”

Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. I. Steady-State Response

“…The reason for the unusual width of the emitting region is not yet clear. Rupprecht et al 2 explained it in terms of a long electron-diffusion length.…”

Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. II. Transient Response

“…The recombination time r for electrons in the p-region can be derived as a function of the stored charge Q and the forward current I by means of the continuity equation, d1e(x) /dx= e (dn/dt) (1) and recombination kinetics,…”