Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Park, Hyeong‐Ho; Lee, Hong Sub; Hill, Ross H.; Hwang, Yun Taek

doi:10.1016/j.apsusc.2008.11.011

Cited by 12 publications

(4 citation statements)

References 26 publications

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“…[ 59,61 ] In PMOD based fabrication, dry or wet etching is not necessary, which as a result avoids introducing physical defects, chemical degradation of the patterned materials, and pollution from hazardous by‐products during dry or wet etching. [ 52 ] Moreover, the PMOD process can be performed under ambient conditions (e.g., room temperature, atmospheric pressure), which limits the inter‐diffusion of materials between the encapsulating matrix (e.g., TiO x ) and the nanoparticles (e.g., UCNPs) and otherwise avoids damage to the patterns and the nanoparticles. [ 62 ]…”

Section: Resultsmentioning

confidence: 99%

“…This approach avoids physical defects, chemical degradation of the films, and pollution associated with hazardous by‐products resulting from dry or wet etchants. [ 52 ] The PMOD based approach also enables good control over the atomic ratio of metallic species in these thin films. This control can be used to create multi‐component compositions (e.g., Pb(ZrTi)O 3 ).…”

Section: Introductionmentioning

confidence: 99%

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Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Zhang

Ali

Boyer

et al. 2020

Advanced Optical Materials

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by simple, portable techniques. [2-4] Various technologies such as laser patterned holograms, [5] nuclear track technology, [6] printing of non-fluorescent photonic crystalline materials, [7,8] and printing of luminescent materials, [2] have been utilized to prepare anti-counterfeit measures. Among these technologies, luminescent labels have attracted widespread attention due to their special optical characteristics, such as their unique emission spectra, lifetimes, and light scattering properties. [2-4,9] These labels are typically prepared by creating patterns from a luminescent "security ink." [2-4,9] These inks are usually prepared by incorporating luminescent nanoparticles into a matrix (e.g., suspensions containing solvents, surfactants, polymers, and/or other additives). [2,4] Common luminescent materials sought to prepare these inks include molecular species (e.g., organic dyes, organometallic complexes), [10-12] quantum dots (QDs) (e.g., C, CdS, CsPbI 3), [13-15] plasmonic nanostructures (e.g., Au, Ag), [16-18] upconverting nanoparticles (UCNPs) (e.g., β-NaYF 4 :Yb 3+ , Er 3+), [19-21] or downconversion materials (e.g., NaGdF 4 :Ce 3+ , Ln 3+). [22,23] Patterning of these luminescent inks offers several advantages to creating anti-counterfeiting measures such as compatibility with high-throughput patterning techniques, tunable emissive properties, and bright discernible colors under external stimuli. [1-4] For luminescent based anti-counterfeit measures, a luminescent ink can be used to produce various coded patterns. The anti-counterfeit properties of luminescent materials rely primarily upon their ability to discretely hide secret information and to create complex, coded patterns. [2,3,19,24] The ease of access to fluorescent molecules and downconversion nanomaterials active across the ultraviolet (UV)-to-visible region of the electromagnetic spectrum, and access to excitation sources across the same spectral range has made it easier to duplicate anticounterfeit measures based on fluorescent molecules, quantum dots, and plasmonic nanoparticles. [25] Recently, UCNPs have attracted attention for the preparation of luminescent inks, which have potential applications in anti-counterfeit technologies. Near-infrared (NIR)-to-visible luminescent materials based on the so-called "upconversion" luminescence are relatively Creating security labels as anti-counterfeit measures can require multi-step methods, clean room processing, and high-cost equipment. Some labels also have a limited applicability due to the ease of creating a counterfeit. Herein, a photochemical metal-organic deposition (PMOD) based approach that enables creation of high-resolution luminescent patterns that retain nanoparticles in transparent metal oxide films is reported. This low-cost, photoresist-free process creates high-resolution patterns of metal oxides without requiring processes such as etching or lift-off. Upconverting nanoparticles (UCNPs) with tunable red/green or blue emission are prepared by doping Yb 3+ /Er 3+ and Yb 3+ /Tm 3+ ...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Zhang

Ali

Boyer

et al. 2020

Advanced Optical Materials

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“…Kao et al reported that the films showed improvement of electrical properties using the sol-gel method [2]. The excellent fatigue property up to 1010 cycles by the metal organic deposition (MOD) method was reported [3,4]. A.Z.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on the Properties of Sputtered Bi_3.25La_0.75Ti₃O₁₂Thin Films

Kang

Song²

2013

Transactions on Electrical and Electronic Materials

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Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/SiO 2 /Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from 600℃ to 750℃ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at 700℃ was 10.92 μC/cm 2 . The fatigue characteristic of the BLT thin film annealed at 700℃ was shown change polarization up to 1.2 × 10 9 switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.

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“…60, 20, and 30 μC/cm 2 , respectively. [12][13][14][15][16][17][18][19][20] However, relatively high processing temperatures are necessary to form the crystalline ferroelectric films, i.e., > 650 • C, >750 • C, and >650 • C for PZT, SBT, and BIT, respectively. Such high temperatures can damage logic circuits monolithically integrated with FRAMs and may oxidize transistor electrodes; for example, nickel silicide can only tolerate 450 to 490 • C. 18 Inevitably, the ferroelectric layer should be fabricated prior to transistor formation, which complicates procedures.…”

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confidence: 99%

Conformal Bismuth Titanate Formation Using Supercritical Fluid Deposition

Zhao

Jung

Shimoyama

et al. 2017

ECS J. Solid State Sci. Technol.

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Supercritical fluid deposition (SCFD) of a conformal and stoichiometric Bi 4 Ti 3 O 12 (BIT) bismuth titanate film was developed in this work. It was achieved by adding a bismuth (Bi) precursor, triphenylbismuth, during the deposition of TiO 2 from titanium di(ipropoxide)bis (2,2,6,6-tetramethyl-3,5-heptanedionato). Conformal deposition with high growth rate was possible. In this system, the oxygen atom-containing ligands of the Ti precursor may have acted as an oxidant for the oxygen atom-free Bi precursor to enable deposition of Bi 2 O 3 . The effect of growth temperature was investigated for the individual depositions of TiO 2 and Bi 2 O 3 at 200-350 • C. It was optimized at 300 • C to minimize the generation of carbon impurity and particles. Stoichiometric BIT with a smooth surface morphology was obtained by tuning the concentrations of the Ti and Bi precursors. A uniform thickness and composition were confirmed on trenches with an aspect ratio of 7. The as-deposited BIT film on a RuO 2 underlayer, which has the same crystal structure as BIT, crystallized in the ( 111) and ( 117) orientations. The conformal, stoichiometric, smooth and crystalline BIT film grown by our SCFD method is of interest for three-dimensional structured devices, such as ferroelectric random-access memories.

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Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Cited by 12 publications

References 26 publications

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Effect of Annealing Temperature on the Properties of Sputtered Bi_3.25La_0.75Ti₃O₁₂Thin Films

Conformal Bismuth Titanate Formation Using Supercritical Fluid Deposition

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Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Cited by 12 publications

References 26 publications

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Effect of Annealing Temperature on the Properties of Sputtered Bi3.25La0.75Ti3O12Thin Films

Conformal Bismuth Titanate Formation Using Supercritical Fluid Deposition

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Product

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Effect of Annealing Temperature on the Properties of Sputtered Bi_3.25La_0.75Ti₃O₁₂Thin Films