Electric Contact to Zinc Sulphide Crystals

Alfrey, G F; Cooke, I. J.

doi:10.1088/0370-1301/70/11/412

Cited by 37 publications

(6 citation statements)

References 4 publications

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“…Using indium contacts similar electrical characteristics to those observed with bulk zinc sulphide crystals were obtained [8,9]. For small applied voltages the electrical characteristic of the heterojunction was completely dominated by the high resistivity ZnS.…”

Section: Electrical Photoelectric and Electroluminescent Propertiesmentioning

confidence: 53%

The growth and properties of epitaxial layers of zinc sulphide on germanium

1970

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Section: Electrical Photoelectric and Electroluminescent Propertiesmentioning

confidence: 53%

The growth and properties of epitaxial layers of zinc sulphide on germanium

1970

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“…Electrical contacts produced by freezing molten In onto the KI crystal were found to be initially blocking. However, ohmic contacts could be "formed" by applying a large pulsed voltage as has been described for ZnS by Alfrey and Cooke [26]. The results for the current density versus applied potential are shown in Fig.…”

Section: Resultsmentioning

confidence: 87%

Electrical pumping of color center lasers

Boyd

Malcuit

Teegarden

1982

IEEE J. Quantum Electron.

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This paper presents an assessment of the feasibility of using electrical pumping to achieve laser action in color centers in the alkali halides. We discuss mainly the self-trapped exciton in the alkali halides, which is a prime candidate for such a pumping scheme because it is known to produce strong electroluminescence. The theory of electrical contacts to insulating crystals is reviewed, as is the theory of spacecharge-limited currents in insulators. It is shown that sufficient energy can be delivered to an alkali halide crystal by a space-charge-limited current to reach the threshold for laser action. We present experimental evidence which demonstrates that when ohmic contact is made to a KI single crystal, large space-charge-limited currents can flow. Finally, from the measured value of the electroluminescent intensity we infer the value of the population inversion achieved through electrical pumping of KI with blocking contacts. C tion laser operation with less amplified spontaneous emission University, Stanford, CA 94305. He is now with the University of New (ASE). Third, Beiting and Smith reported that the new Mexico, Albuquerque, NM, 87106. design admitted a simpler alignment procedure than did the

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“…However, the current-voltage characteristics of the ZnS films proved impossible to interpret on the basis of space-charge-limited current theory. In order to obtain space-charge-limited currents in 11-VI compounds it has been found necessary by previous workers to prepare the contacts by heating to cause diffusion of the contacting metal into the surface layers of the ZnS (Alfrey and Cooke 1957). This was not possible in the case of the very thin films of ZnS on NaCl studied here.…”

Section: Electrical Properties Of the Epitaxial Filmsmentioning

confidence: 94%

“…Moreover the interpretation of these results in terms of the Schottky effect is physically plausible. The occurrence of the effect would imply the existence of Schottky barriers, and these are to be expected since the specimens were not heated to diffuse the In into the ZnS (Alfrey and Cooke 1957). The occurrence of the Schottky effect also implies the presence of fields of the order of 1 MV cm-1, which were the values of the fields in the films.…”

Section: Electrical Properties Of the Epitaxial Filmsmentioning

confidence: 99%

Epitaxial growth of films of ZnS evaporated on to NaCl

Woodcock

Holt

1969

J. Phys. D: Appl. Phys.

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Films of ZnS were deposited on to NaCl by vacuum evaporation. The influence of the growth conditions on the structure of the films was studied by transmission electron microscopy. The most important single factor in producing the widest range of epitaxial substrate temperatures and the most perfect films was the use of focused electron-beam evaporation. Contamination raised the minimum substrate temperature for epitaxial growth. It also resulted in the incorporation of doubly positioned wurtzite-structure grains in the sphalerite-structure films. Co-evaporation of an excess of either Zn or S with ZnS produced sphalerite-structure films containing singly positioned wurtzite grains. The use of conventional hot tantalum evaporators resulted in the incorporation of 0·2 wt.% of tantalum in the films and in poor structural quality. Reproducible current-voltage characteristics were obtained in the best structural quality films. These current-voltage characteristics could be understood in terms of the effect of Schottky barriers but not of space-charge-limited currents.

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Electric Contact to Zinc Sulphide Crystals

Cited by 37 publications

References 4 publications

The growth and properties of epitaxial layers of zinc sulphide on germanium

The growth and properties of epitaxial layers of zinc sulphide on germanium

Electrical pumping of color center lasers

Epitaxial growth of films of ZnS evaporated on to NaCl

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