Electrical and Thermal Performance of AlGaN/GaN HEMTs on Diamond Substrate for RF Applications

Dumka, D.C.; Chou, Tso-Min; Jiménez, José; Fanning, Dave; Francis, Daniel; Faili, Firooz; Ejeckam, F.; Bernardoni, Mirko; Pomeroy, James W.; Kuball, Martin

doi:10.1109/csics.2013.6659225

Cited by 55 publications

(30 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should be noted that the critical impact of the diamond substrate on the device electrical performance, as the material originated from a qualified epitaxy (GaN-on-Si), is the lower thermal resistance and thus reduced device channel temperatures. The DC and RF electrical characteristics of related GaN-on-diamond devices were reported in recent publications [23,24], and it was shown [25] that the DC current droop in the saturation region due to self-heating is substantially reduced for GaN-on-diamond HEMTs compared to GaN-on-SiC and GaN-onSi devices.…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun

Pomeroy

Simon

et al. 2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun

Pomeroy

Simon

et al. 2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

“…A promising substrate material for GaN is diamond [36]. The current model should be useful in the assessment of GaN on diamond, provided that the thermal boundary and interface layer resistance are low [37].…”

Section: Discussionmentioning

confidence: 99%

Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

Darwish

Bayba

Hung

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

This paper presents an enhanced, closed-form expression for the thermal resistance, and thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of the temperature-dependent thermal conductivity of GaN and SiC or Si substrates. In addition, the expression accounts for temperature increase across the die-attach. The model's validity is verified by comparing it with experimental observations. The model results also compare favorably with those from finite-element numerical simulations across the various device geometric and material parameters. The model provides a more accurate channel temperature than that from a constant thermal conductivity assumption; this is particularly significant for GaN/Si HEMTs where the temperature rise is higher than in GaN/SiC. The model is especially useful for device and monolithic microwave integrated circuit designers in the thermal assessment of their device design iterations against required performance for their specific applications.

show abstract

“…8,130 It can also be a disordered adhesion layer (thinner than 50 nm) for GaN-diamond composites fabricated by the epitaxial transfer technique. 37,38,101,131 Temperature fields measured with micro-Raman thermometry were used to extract MOCVD GaN-SiC and GaN-Si interface resistances 8−10 and GaN-diamond interface resistances (for GaN-diamond composites fabricated by epitaxial transfer). 38,131 Several Raman studies 8−10 for MOCVD GaN-SiC interface resistances reported relatively large thermal resistances (i.e., from 8 m 2 K GW −1 up to 60 m 2 K GW −1 ) and a very strong temperature dependence-a rapidly increasing trend with increasing temperature-between 330 and 520 K. Another Raman study 8 reported 33 m 2 K GW −1 at 573 K as a MOCVD Other studies used an optical transient interferometric mapping (TIM) technique to estimate interface resistances very approximately for GaN-SiC and GaN-diamond composites.…”

Section: Gan Thermal Conductivitymentioning

confidence: 99%

Near-Junction Thermal Management: Thermal Conduction in Gallium Nitride Composite Substrates

Cho

Asheghi

et al. 2015

Annual Rev Heat Transfer

View full text Add to dashboard Cite

The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak amplification power density of these devices is limited by heat transfer at the device, substrate, package, and system levels. Thermal resistances within micrometers of the transistor junction can limit efficient heat spreading from active device regions into the substrate and can dominate the overall temperature rise. Gallium nitride composite substrates, which consist of AlGaN/GaN heterostructures with thickness of a few microns on a thicker non-GaN substrate, govern the thermal resistance associated with the "near-junction" region. Silicon and silicon carbide have been widely used as a substrate material, but the performance of GaN devices grown on these substrates is still severely limited by thermal constraints and associated reliability issues. The importance of effective junction-level heat conduction has motivated the development of composite substrates containing high-thermal-conductivity diamond, but these composites require careful attention to thermal resistances between the GaN and the diamond. This chapter reviews thermal conduction phenomena in GaN composite substrates containing Si, SiC, and diamond. The review discusses the governing conduction physics and overviews the relevant measurement techniques. The best available experimental data for GaN composite substrates as well as the relevant thermal modeling are presented. The review concludes with an assessment of the potential benefits of the use of diamond on the device thermal performance.

show abstract

Electrical and Thermal Performance of AlGaN/GaN HEMTs on Diamond Substrate for RF Applications

Cited by 55 publications

References 5 publications

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

Near-Junction Thermal Management: Thermal Conduction in Gallium Nitride Composite Substrates

Contact Info

Product

Resources

About