Electrical characteristics of high quality La<sub>2</sub>O<sub>3</sub> gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Wu, Yung-Hsien; Yang, Ming-Jui; Chin, Albert; Chen, W.J.; Kwei, C. M.

doi:10.1109/55.847374

Cited by 220 publications

(112 citation statements)

References 4 publications

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“…However, it also turns out that the thermodynamic data for many oxides was not so accurate. It was subsequently found that ZrO 2 is actually slightly unstable [12,13] [14][15][16][17][18].…”

Section: Thermodynamic Stabilitymentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,560

828

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Abstract. The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2, such as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered. PACS

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Section: Thermodynamic Stabilitymentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,560

828

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“…We obtained a relatively low dielectric constant of 17.3 for La 2 O 3 compared to the value of 27 reported earlier. 4 This low dielectric constant is possibly due to the amorphous character of the film and the instability of the oxide-hydroxide phase, as is also shown by the Arrhenius plots in Fig. 3͑a͒.…”

mentioning

confidence: 71%

“…Lanthanum oxide ͑La 2 O 3 ͒ has achieved special attention in this series since it can achieve less than 1 nm equivalent oxide thickness, with a dielectric permittivity of ϳ27, very low trap levels, and high breakdown electric fields. 4 Yet, despite the superior electrical performances, La 2 O 3 ͑lanthana͒ has been found to be very hygroscopic, thus changing its dielectric properties in humid ambience. [5][6][7] Doping with aluminum or other larger lattice energy oxides ͑Y 2 O 3 , ZrO 2 , etc.͒ was reported to be effective in order to prevent moisture-induced structural and consequent electrical instabilities of this material.…”

mentioning

confidence: 99%

Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Jinesh¹,

Tois²,

Klootwijk

et al. 2008

Applied Physics Letters

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“…[4][5][6][7] Since the applied electric field is generally too strong (5 MV/cm) for the most widely used oxide SiO 2 (ξ = 3.9) in 4H-SiC MOS devices, it is important to develop new dielectric materials with higher dielectric constants (K) that can overcome this problem. Many [14][15][16][17][18] While the interface state density of the La 2 O 3 /4H-SiC structure is high due to crystal mismatch, introducing an ultrathin SiO 2 interfacial layer between La 2 O 3 and 4H-SiC can help overcome this problem. Although the La 2 O 3 /SiO 2 /4H-SiC structure has been previously proposed in the literature, 19,20 few studies have analyzed the effects of annealing at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

Wang¹,

Jia²,

Li³

et al. 2015

AIP Advances

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In this work, we describe a rapid thermal annealing (RTA) process for the La2O3/SiO2/4H-SiC interface and investigate its effect on the material’s electrical properties. Our results indicate that the trap charge density and interface state density (Dit) are reduced as the RTA temperature increases due to the termination of residual carbon and dangling bonds. We demonstrate that the sample obtained after RTA at 500 °C has the highest breakdown electric field (Efb) (7 MV/cm) due to a decrease in the trap charge density and an improvement in the interfacial properties. However, when the RTA temperature reaches 600 °C or higher, a lower Efb value (1.2 MV/cm) is obtained due to leakage routes generated by the crystallization of La2O3. Based on our results, we conclude that the ideal choice for the RTA temperature is 500 °C.

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Electrical characteristics of high quality La₂O₃ gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Cited by 220 publications

References 4 publications

High dielectric constant oxides

High dielectric constant oxides

Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

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Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Cited by 220 publications

References 4 publications

High dielectric constant oxides

High dielectric constant oxides

Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

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Product

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Electrical characteristics of high quality La₂O₃ gate dielectric with equivalent oxide thickness of 5 /spl Aring/