Electrical characteristics of silicon nanowire CMOS inverters under illumination

Yoo, J.; Kim, Yoonjoong; Lim, Doohyeok

doi:10.1364/oe.26.003527

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…With just one single-gate on a SiNW channel, an RFET design by Darbandy et al achieved the same functionality as the double gate RFETs [283] and improved operating speed. Following that, Yoo et al [284] have investigated the electrical characteristics of CMOS inverters with SiNW channels. The images and schematic illustration of a SiNW CMOS inverter consisting of n and p-SiNW-FETs on a transparent substrate are shown in figure 17.…”

Section: Sinw-based Fetsmentioning

confidence: 99%

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

2023

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Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc.). These nano-structures improved the system's performance in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will enlighten all researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.

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Section: Sinw-based Fetsmentioning

confidence: 99%

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

2023

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“… ( a ) Optical images and ( b ) schematic illustration of the SiNW CMOS inverter on a transparent substrate. Reproduced from [ 234 ]. ( c ) Schematic of a SiNW-FET-based charge-trapping non-volatile flash memory; ( d ) TEM image of the cross section of a MATATOS device.…”

Section: Figurementioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

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Photodetectors based on controllable growth of large-area graphene films

Zheng

Zhang

et al. 2020

Thin Solid Films

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Electrical characteristics of silicon nanowire CMOS inverters under illumination

Cited by 5 publications

References 35 publications

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Photodetectors based on controllable growth of large-area graphene films

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