Electrical characterization of TiSi/Si1−x−yGexCy Schottky diodes

Saha, Anirban; Chattopadhyay, Sanatan; Maiti, C. K.

doi:10.1016/j.mseb.2004.07.016

Cited by 6 publications

(12 citation statements)

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“…Their interface properties have a dominant influence on the performance, reliability and stability of devices [1,4,5]. A good MS contact is essential for the successful operation of electronic circuits and devices [6]. The electronic properties of the MS contacts are characterized by their barrier height (BH).…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…Schottky contacts play an important role in controlling the electrical performances of semiconductor devices and Schottky barrier height (SBH) which is highly sensitive to thermal treatment [5]. Microelectronics has primarily been a Si-based technology because of the stability and high quality of SiO 2 [6], as stability and reproducibility of contact properties are essential prerequisites for device development [2,7,8].…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Chawanda

Coelho

Auret

et al. 2012

Journal of Alloys and Compounds

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Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process.Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500 o C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures.Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700 o C.

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“…A good MS contact is essential for the successful operation of these electronic devices. Schottky contacts play an important role in controlling the electrical performances of semiconductor devices and Schottky barrier height (SBH) [5], which is an important parameter that determines the electrical characteristics of MS contacts [6]. Microelectronics has been primarily a Si-based technology because of the stability and high quality of SiO 2 and its interface with a Si substrate [7].…”

Section: Introductionmentioning

confidence: 99%