Electrical Degradations of p-GaN HEMT under High Off-state Bias Stress with Negative Gate Voltage

Zhang, Chi; Sheng, L.; Liu, Siyang; Wei, Jiaxing; Wu, Wengan; Sun, Weifeng

doi:10.1109/ipfa47161.2019.8984885

Cited by 4 publications

(2 citation statements)

References 16 publications

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“…It is also worth to mention that the shift can be affected by the self-heating of the device during the stress. A positive VTH shift under negative gate bias was also reported in [19,35].…”

Section: B Negative Gate Stresssupporting

confidence: 64%

Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs

Gonzalez

Etoz

Alatise

2020

2020 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…It is also worth to mention that the shift can be affected by the self-heating of the device during the stress. A positive VTH shift under negative gate bias was also reported in [19,35].…”

Section: B Negative Gate Stresssupporting

confidence: 64%

Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs

Gonzalez

Etoz

Alatise

2020

2020 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…Gallium nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in both radio frequency and power electronics [ 1 , 2 , 3 ], thanks to the superior performance in switching speed and switching losses [ 4 , 5 , 6 ]. For this new technique, the bias temperature instability (BTI) effect is one of the most crucial reliability problems that often take place, especially when the GaN HEMTs are operating under positive gate voltage bias [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. To achieve an enhancement-mode operation, two gate architectures, including p-GaN gate HEMTs with a Schottky gate terminal and gate injection transistors (GIT) with an Ohmic gate terminal [ 5 ], have been adopted for mass production.…”

Section: Introductionmentioning

confidence: 99%

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Li,

Wang,

Zhang

et al. 2023

Micromachines

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The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (VTH) of HEMTs under BTI stress by fast sweeping characterizations. The HEMTs without time-dependent gate breakdown (TDGB) stress featured a high VTH shift of 0.62 V. In contrast, the HEMT that underwent 424 s of TDGB stress clearly saw a limited VTH shift of 0.16 V. The mechanism is that the TDGB stress can induce a Schottky barrier lowering effect on the metal/p-GaN junction, thus boosting the hole injection from the gate metal to the p-GaN layer. This hole injection eventually improves the VTH stability by replenishing the holes lost under BTI stress. It is the first time that we experimentally proved that the BTI effect of p-GaN gate HEMTs was directly dominated by the gate Schottky barrier that impeded the hole supply to the p-GaN layer.

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Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs

Oeder

Pfost

2021

IEEE Trans. Electron Devices

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Electrical Degradations of p-GaN HEMT under High Off-state Bias Stress with Negative Gate Voltage

Cited by 4 publications

References 16 publications

Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs

Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs

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