Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM

Lai, Sheng-Chih; Lee, J.; Dham, V.K.

doi:10.1109/iedm.1983.190473

Cited by 57 publications

(7 citation statements)

References 14 publications

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“…High capture cross-sections in the range 10-I6-10-14 cm 2 have been generally attributed to nitrogen related tiraps [13,14,25,26]. Lai and Al have reported an increase of the SiOH related trap density after thermal nitridation [11,17].…”

Section: Discussionmentioning

confidence: 98%

“…Hydrogen is a by-product of the decomposition of ammonia and it can react with SiO 2 at elevated temperature; the actual exchange reaction between oxygen and nitrogen atoms must involve an hydrogen containing species to explain the higher nitridation rate in ammonia ambient. Nitrided Si0 2 films have been shown to be less sensitive to radiations [9,10], high electric field stresses [11] and to be an efficient diffusion barrier to dopants as boron [6,12], which diffuses easily in non-nitrided SiO2. These properties make nitrided oxides attractive as gate insulators for a number of applications including EEPROM's, dual CMOS technology which requires the use of p+ boron doped polysilicon gates and radiation hardened devices.…”

Section: Introductionmentioning

confidence: 99%

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Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

et al. 1992

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In this work, we report the effects of an ammonia plasma nitridation on the charge trapping properties of thin SiO 2 films in correlation with their nitrogen and hydrogen contents. Electron traps characteristics were determined by the avalanche injection technique. Hydrogen contents were measured by Elastic Recoil Detection analysis (ERDA). Nitrogen depth profiles were obtained with Auger spectroscopy. It is shown that the bulk electron trapping properties are essentially controlled by the specificity of hydrogen and nitrogen incorporation in the SiO2 films during the ammonia plasma process. For short nitridation times, an increase of hydrogen related electron trap densities is observed in good agreement with hydrogen ERDA measurements. However hydrogen concentration never exceeds 3 at% and can be scaled down by a short time post-nitridation anneal in oxygen, to a level comparable indeed inferior to that of a non-nitrided oxide. For heavy nitridation, an additional electron trap is detected which could be associated to the presence of nitrogen in the bulk of SiO 2 .

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Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

et al. 1992

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“…The fabrication process started with p-type 14-22 ⍀ cm, ͑100͒ oriented silicon wafers. [25][26][27][28] Approximately 0.3 m Al-1% silicon alloy was sputter deposited and MOS capacitor areas were photolithographically defined. Oxidation was carried out in a resistively heated furnace at atmospheric pressure.…”

Section: Fabrication Process and Testmentioning

confidence: 99%

Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

Ahmed

Denton

Neudeck

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors J. Vac. Sci. Technol. B 29, 01A904 (2011); 10.1116/1.3534008 Interface trap and oxide charge generation under negative bias temperature instability of p -channel metal-oxidesemiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics J. Appl. Phys. 98, 114504 (2005); 10.1063/1.2138372Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxidesemiconductor field effect transistors Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors Nitrided thermal oxide was used to reduce the degradation of top and bottom gate insulators of self-aligned double gate metal-oxide-semiconductor field effect transistors that use a form of selective epitaxial growth of silicon ͑SEG͒ called tunnel epitaxy. The degradation of thermal oxide was due to the exposure of gate insulator to the epi-growth ambient gases during the epitaxial growth. Both thermal oxide and thermally nitrided oxide samples were exposed to the epi-reactor gases and then the electrical characteristics were measured. Nitrided oxide showed significantly higher breakdown field, lower leakage current, and lower interface states than the thermal oxide after exposure to the selective epi-growth environment. For a 30 min stress in epi-reactor ambient, thermal oxide showed average breakdown fields of less than 1 MV/cm due to the formation of pinholes, while nitrided oxide samples showed average breakdown fields of 15.6 MV/cm for same stress condition. Interface state density (D it ) of nitrided oxide improved after exposure to epitaxial growth ambient. The average D it reduced from ϳ3.5ϫ10 10 /cm 2 eV to ϳ1.5ϫ10 10 /cm 2 eV for a 30 min SEG/epitaxial lateral overgrowth stress for nitrided oxides.

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“…It was reported that some high-κ dielectrics (e.g., HfO 2 and HfSiO) that incorporated La could be used for high-performance CMOS technology to enhance digital and analog performances as well as reliability characteristics [9]. On the other hand, it is generally accepted that heavy nitridation induces a high density of electron traps with large capture cross section [10], and N incorporation in HfO 2 results in beneficial characteristics, including excellent resistance to interdiffusion of elements between different layers, higher dielectric strength [11], and enhanced immunity to damages induced by high-field stress [12]. In view of the aforementioned two points, it is hoped that better charge-trapping properties and dielectric performances could be achieved by simultaneously incorporating La and N into the HfO2 thin film.…”

Section: Introductionmentioning

confidence: 99%

A Novel MONOS Memory With High-$\kappa$ HfLaON as Charge-Storage Layer

Liu

Jiang

et al. 2011

IEEE Trans. Device Mater. Relib.

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MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel chargestorage layer in a metal-oxide-nitride-oxide-silicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger Hf-N and La-N bonds, and more stable atomic structure and HfLaON-SiO 2 interface, as compared to the HfLaO dielectric.Index Terms-Charge-storage layer (CSL), endurance, HfLaON, metal-oxide-nitride-oxide-silicon (MONOS) memory, program/erase (P/E) characteristics.

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Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM

Cited by 57 publications

References 14 publications

Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

A Novel MONOS Memory With High-$\kappa$ HfLaON as Charge-Storage Layer

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