Electrical properties of nitrogen‐related defects in n‐type GaAsN grown by molecular‐beam epitaxy

Abstract

Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS (LDLTS) techniques have been employed to characterize electron traps in dilute GaAsN epitaxial layers grown by Molecular Beam Epitaxy (MBE) on n+ GaAs substrates. The GaAsN samples used in this study were silicon doped (n‐type) and contained nitrogen concentrations ranging from 0.2% to 1.2%. The number of electron traps in each sample detected by the DLTS measurements is found to be dependent on the nitrogen contents. Some of the traps have been identified with previously reported (N‐As)spl split interstitial, nitrogen‐split interstitial, EL6‐like interfacial defect and EL3 defect levels. In a control sample without nitrogen we observed only one deep electron emitting level of energy 0.76 eV and no shallow levels have been seen. However, new shallow traps with energies ranging from 0.036 to 0.13 eV have been detected in samples with nitrogen content in the range 0.2% to 0.4%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

“…Therefore, the E1 trap with the activation energy of 0.15 to 0.24 eV was tentatively associated with one of such N complexes. Similar electron traps with comparable activation energies (depending on the N content) have been already observed in GaNAs grown by MBE [26,27], CBE [16] as well as MOVPE [28].…”

“…The EL2 defect has been the most important and extensively studied deep-level defect in GaAs in the last two decades. It is generally [16], b [26], c [27], d [28], e [36], f [29], g [34], h [32] considered that EL2 level is related to the isolated arsenic antisite defect (As Ga ) or defect complex involving As Ga with interstitials and/or vacancies (As i , V As , V Ga ) [34,37] and its formation is favorable under the As-rich conditions. The EL2 defect is also commonly observed in GaNAs and GaInNAs layers grown by different techniques [6,14,27,30].…”

Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

“…7 are included the activation energies of electron traps of as-grown and irradiated diodes relative to the edge of the CB. Trap parameters for a control sample with N ¼ 0% is also shown with an activation energy of 0.76 eV, capture cross section of 5.15 Â 10 À14 cm 2 and trap concentration of 2.85 Â 10 15 cm À3 [9]. Furthermore, the estimated energetic positions in GaNAs band gap of well-known GaAs-like traps reported previously in n-type GaAs grown by MBE [36e40] are plotted in Fig.…”

“…[9]. Briefly, the main growth parameters are: growth rate is 1 mm per hour and growth temperature is 500 C. As shown in Fig.…”

“…Recently, DLTS and Laplace DLTS (LDLTS) techniques have been used to provide information about electron traps in dilute GaAsN layers grown by Molecular Beam Epitaxy (MBE) on nþ GaAs substrates [9]. It was observed that few shallow and deep levels with activation energies ranging from 0.036 to 0.13 eV are introduced in samples containing nitrogen with concentration of 0.2%e 0.4%.…”