Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

Kumar, Ashwani; Reddy, V. Rajagopal; Janardhanam, V.; Yang, Hyundeok; Yun, Hyung-Joong; Choi, Chel‐Jong

doi:10.1016/j.jallcom.2012.09.085

Cited by 41 publications

(5 citation statements)

References 19 publications

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“…In order to distinguish, we limit our discussions in this section to insulating interlayers that are thick enough ($2 nm) such that the potential distribution and the electron transport across the entire "stack" of the metal-interlayer-semiconductor can be treated as that of a metal-interlayer (M-I) interface and an interlayer-semiconductor (I-S) interface connected in series, without need for explicit coupling between the two interfaces. Inorganic insulating materials, such as oxides and wide-gap semiconductors, [302][303][304][305][306][307][308][309][310][311][312][313][314][315][316] organic material, such as polymer or evaporated molecules, [317][318][319] and semiconducting material with different band gap, [320][321][322][323] have been employed as the insulating interlayer between metals and semiconductors and have been shown to effectively modify the "overall" SBH. Because of recent interest in Ge and its alloys, e.g., strained GeSn, for high performance semiconductor devices, much research also focused on the well-known "contact problem" with Ge.…”

Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

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“…It is believed that this new defect is demonstrated by the enhanced crystalline quality of HfO2 films formed by RFmagnetron sputtering. The structural improvements will be verified by XRD [33]. The 3μm x 3μm scan area's two-dimensional AFM image is displayed in (Fig.…”

Section: Resultsmentioning

confidence: 84%

“…This plot enables one to determine if the extracted reverse-bias I-V curves of the manufactured device exhibit Poole-Frenkel emission (PFE) or Schottky emission (SE) conduction mechanisms. If the PFE mechanism dominates the current in the reverse bias, it is written as [33].…”

Section: Fig 5 Plot Of Dv/dln (I) and H (I) Versus I For The Mo/hfo2/...mentioning

confidence: 99%

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

et al. 2024

IJFMR

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This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strongly influence the electrical properties of the diode. The electrical properties of the Mo/HfO2/n-Si metal/insulator/semiconductor (MIS) diode were obtained via current-voltage (I-V) measurements in the voltage range from −3 V to +3 V at room temperature. A better rectifying ability and a reduced reverse leakage current were demonstrated by the MIS diode. The MIS dide's barrier height (Bh) and ideality factor value were calculated to be 0.85 eV and 1.21, respectively. The MIS diode was able to achieve a higher b, which allowed the HfO2 interlayer to change BH. The calculated BH values from the I-V, Hernandez, Cheung, and Norde approaches were comparable to one another, demonstrating their validity and consistency. The MIS diode's forward bias log (I) - log (V) curve demonstrated that it was ohmic in low-voltage regimes and that conduction was space-charge-limited in high-voltage regimes. However, for the MIS diode, the Poole-Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions. These outcomes indicate that the HfO2 film can be chosen as dielectric materials in the construction of MIS devices.

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“…Nowadays, PEDOT:PSS applications are not limited to organic devices but extended to hybrid semiconductor devices. In the fabrication of solar cells and photodetectors PEDOT:PSS has been successfully applied as a Schottky contact or interlayer to several inorganic semiconductors such as MgZnO, CdS, CdSe, Si, Ge, InP, GZO, IZO, ZnO [2][3][4][5][6][7][8][9][10][11][12][13]. Despite the spreading of hybrid devices based on PEDOT: PSS, most of the literature does not fully analyze the dark electrical characteristics of the fabricated devices, and to the best of our knowledge none of them have analyzed the current-voltage-temperature (I-V-T) characteristics.…”

Section: Introductionmentioning

confidence: 99%

Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes

Hernández‐Como

Rodriguez-Lopez

Hernandez-Cuevas

et al. 2016

Semicond. Sci. Technol.

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In this work, we report the temperature dependence of the electrical parameters of PEDOT:PSS/ ZnO Schottky barrier diodes (SBDs) grown on glass substrates. To understand the current conduction mechanism, the current-voltage-temperature characteristics of PEDOT:PSS/ZnO thin film SBDs were studied. The electrical parameters were extracted with both thermionic emission and Cheung models. The obtained Richardson constant and effective barrier height were 5 A cm −2 °K−2 and 0.74 eV, respectively. The diode ideality factor was 1.5 and the series resistance was 36 Ω. All these electrical parameters turned out to be temperature independent which was associated with the dominant transport mechanisms of thermionic emission. The Richardson constant slightly deviates from theoretical values due to the presence of interfacial defects created by the preparation and deposition of PEDOT:PSS and the ZnO film crystallinity. The conductive polymer PEDOT:PSS, as a Schottky contact to ZnO, arises as an alternative to the expensive noble metals: Pt, Pd, Ag and metal oxides: IrOx, PdOx, PtOx.

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Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

Cited by 41 publications

References 19 publications

The physics and chemistry of the Schottky barrier height

The physics and chemistry of the Schottky barrier height

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes

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