Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition

Lal, K.; Meikap, Ajit Kumar; Chattopadhyay, S. K.; Chatterjee, Sudipta; Ghosh, Manas; Baba, Koumei; Hatada, Ruriko

doi:10.1016/s0921-4526(01)00626-3

Cited by 34 publications

(13 citation statements)

References 33 publications

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“…This value bears a good agreement with the values represented by Ruthruff et al [38]. We have also noticed very similar results for titanium nitride films in the temperature range 77 # T # 300 K [39]. Since Ta is not a ferromagnetic material, we may conclude that the T 2 variation of resistivity may be due to the above two mechanisms in Ta film.…”

Section: Ta Filmsupporting

confidence: 91%

A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Lal

Ghosh

Biswas

et al. 2004

Solid State Communications

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Section: Ta Filmsupporting

confidence: 91%

A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Lal

Ghosh

Biswas

et al. 2004

Solid State Communications

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“…The total resistivity 1(T) of the conductor may be expressed by Equation (1), where 1 0 is the residual resistivity, T is the temperature, 1 ph (T) is the electron-phonon scattering, 1 ee (T) is the electron-electron scattering, and 1 m (T) is the scattering due to disordered localized magnetic moments. [15,17] 1ðTÞ ¼ 1 0 þ 1 ph ðTÞ þ 1 ee ðTÞ þ 1 m ðTÞ ð1Þ…”

mentioning

confidence: 99%

Highly Conductive Films of Layered Ternary Transition‐Metal Nitrides

Luo

Wang

et al. 2009

Angew Chem Int Ed

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“…The cell geometry constructed for FEM is detailed in Figure 2a, and the material properties are summarized in Table 1. [21][22][23] According to Equation (1), the amount of heat generated within the switching volume of PCRAM is predominantly determined by the actual σ and k values of GST. Although the k value of GST shows a relatively small variation, in the range of 0.2-0.5 W m − 1 K − 1 , 21 the σ value varies drastically with the crystallinity of GST, varying from 0.5 to 2770 S m − 1 .…”

Section: Characterizationmentioning

confidence: 99%

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

et al. 2015

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Phase-change random access memory (PCRAM) is one of the most promising nonvolatile memory devices. However, inability to secure consistent and reliable switching operations in nanometer-scale programing volumes limits its practical use for highdensity applications. Here, we report in situ transmission electron microscopy investigation of the DC set switching of Ge-Sb-Te (GST)-based vertical PCRAM cells. We demonstrate that the microstructure of GST, particularly the passive component surrounding the dome-shaped active switching volume, plays a critical role in determining the local temperature distribution and is therefore responsible for inconsistent cell-to-cell switching behaviors. As demonstrated by a PCRAM cell with a highly crystallized GST matrix, the excessive Joule heat can cause melting and evaporation of the switching volume, resulting in device failure. The failure occurred via two-step void formation due to accelerated phase separation in the molten GST by the polaritydependent atomic migration of constituent elements. The presented real-time observations contribute to the understanding of inconsistent switching and premature failure of GST-based PCRAM cells and can guide future design of reliable PCRAM. INTRODUCTIONPhase-change random access memory (PCRAM) devices store and erase information by utilizing a large resistivity difference between the crystalline and amorphous states of chalcogenide materials. 1 Among various chalcogenide materials, the Ge-Sb-Te (GST) alloy system is currently considered the most promising candidate material for PCRAM owing to its fast and reversible phase-transition capability, in both the amorphous-to-crystalline (set) and the reverse crystallineto-amorphous (reset) switching. 2,3 Moreover, the set switching of GST occurs through an abrupt increase in the current density at a critical electric field, which is known as threshold switching. 1,4 The threshold switching provides local Joule heat and thereby facilitates the crystallization process at a relatively low electric field, ranging from 30 to 50 V μm − 1 . 5,6 Many modern PCRAM cell designs adopt a nanometer-scale hemispherical or cylindrical shape for programing volume to increase the cell density and reduce the operation power. 7 In such device structures, only a portion of the programing volume makes direct contact with a heater electrode, and the other sides are surrounded by passive GST that remains in the crystalline state and acts as an electrical conductivity path during the set and reset switching. One of the critical reliability issues related to these cell structures is the compositional change, or phase separation, caused by electric field-

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Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition

Cited by 34 publications

References 33 publications

A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Highly Conductive Films of Layered Ternary Transition‐Metal Nitrides

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

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