Electrically Active Defects in Cid Imaging Arrays Fabricated on Hg<sub>0.7</sub> Cd<sub>0.3</sub>Te

Schaake, H. F.; Lewis, AJ

doi:10.1557/proc-14-301

Cited by 12 publications

(2 citation statements)

References 2 publications

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“…14 (112)B HgCdTe/CdTe/Si EPD measurements were determined using the Schaake etch. 15,16 A new etch chemistry was also developed to enhance EPD measurements for (112)B HgCdTe/CdTe/Si and CdTe/Si.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

Benson

Bubulac

Smith

et al. 2010

Journal of Elec Materi

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The electrical performance of HgCdTe/Si photodiodes is shown not to have a direct relationship with the dislocation density as revealed by defect etching. This has led to an equivalent circuit model to explain the relationship of the dislocation density and the electrical test data. A new (112)B HgCdTe/CdTe/Si and CdTe/Si etch pit density (EPD) etch has been demonstrated. The new etch has been used to look for distinctive features which may be responsible for the poor electrical performance of individual diode pixels. The new etch chemistry also reduces the surface roughness of the etched epilayer and makes EPD determination less problematic. The new (to HgCdTe) technique of electrostatic force microscopy has also been used to analyze the electrical properties of dislocations.

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Section: Methodsmentioning

confidence: 99%

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

Benson

Bubulac

Smith

et al. 2010

Journal of Elec Materi

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“…(112)B HgCdTe/Si EPD measurements were carried out using two standard dislocation-revealing etches. 17,18 The EPD was determined using Nomarski microscopy with contrast and feature imaging software. HgCdTe/Si wafers were cleaved into 7 mm 9 7 mm pieces allowing multiple anneal cycle measurements to be performed on the same epilayer.…”

Section: Introductionmentioning

confidence: 99%

Dislocation Analysis in (112)B HgCdTe/CdTe/Si

Benson

Farrell

Brill

et al. 2011

Journal of Elec Materi

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High-quality (112)B HgCdTe/Si epitaxial films with a dislocation density of $9 9 10 5 cm À2 as determined by etch pit density (EPD) measurements have been obtained by thermal cyclic annealing (TCA). The reduction of the dislocation density by TCA has led to a simple rate-equation-based model to explain the relationship between dislocation density and TCA parameters (time, temperature, and number of anneals). In this model, dislocation density reduction is based on dislocation coalescence and annihilation, assumed to be caused by dislocation motion under thermal and misfit stress. An activation energy for dislocation motion in n-type (112)B HgCdTe/Si of 0.93 ± 0.1 eV was determined. This model with no adjustable parameters was used to predict recent TCA annealing results.

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