Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits

Abstract

Articles you may be interested inMicroscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance Appl. Phys. Lett.Effects of ion implantation on electron centers in hydrogenated amorphous carbon films J. Appl. Phys. 93, 5905 (2003); 10.1063/1.1564280Boron penetration in p-channel metal-oxide-semiconductor field-effect transistors enhanced by gate ionimplantation damageWe used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits ͑Si LSIs͒. Two types of defects were detected in the source/drain (n ϩ -type͒ region of 0.25-m-gate-length n-channel metal oxide semiconductor field-effect-transistors on LSIs: ͑i͒ a spin-1 Si dangling-bond ͑DB͒ pair in divacancy-oxygen complexes ͑DB-DB distance, RϷ0.6 nm); and ͑ii͒ a series of larger Si vacancies involving distant Si DBs (Rу1.4 nm). These vacancy-type defects were much more thermally stable in Si LSIs than those in bulk Si crystals. We suggested two physical mechanisms for this enhanced stability: internal mechanical stress and oxygen incorporation in the active regions of LSIs. After examining the relationship between the defects and current-voltage characteristics, we concluded that these defects are distributed in the near-surface n ϩ -type region close to the gate and that they are the source of the gate-induced drain leakage currents.

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

“…Two types of defects were observed in the 64 Mbit sample; they were assigned to large VO complexes ͑V 6 or larger͒ or V 2 O and V 2 O 2 ͑V 2 O x ͒ based on a previous detailed study. 7 The 512 Mbit sample clearly exhibited a large VO signal, but the V 2 O x signal was unclear due to noise. Nevertheless, we deduced that both types of defects were present in every DRAM, because they were formed by ion implantation in the drain ͑n + ͒ region, 7 which is a fundamental process for DRAM technology.…”

“…7 The 512 Mbit sample clearly exhibited a large VO signal, but the V 2 O x signal was unclear due to noise. Nevertheless, we deduced that both types of defects were present in every DRAM, because they were formed by ion implantation in the drain ͑n + ͒ region, 7 which is a fundamental process for DRAM technology. The defects possess two or more Si dangling bonds ͑DBs͒, which generate electronic levels E t in the gap; for the V 2 O x type ͑with two DBs, electron spin S =1͒, two ͑ϩ͉0͒ levels lie at E V ͑valence band top͒ + 0.3-0.4 eV.…”

“…The EDMR setup and measurement conditions used here were basically the same as those previously reported. 7,8 Figure 2 shows typical EDMR spectra for the two samples when the reverse bias ͑V R ͒ was applied to their pn junctions ͑the n + -drain to the p-well͒. Two types of defects were observed in the 64 Mbit sample; they were assigned to large VO complexes ͑V 6 or larger͒ or V 2 O and V 2 O 2 ͑V 2 O x ͒ based on a previous detailed study.…”

“…Their EDMR signal intensities were sensitive to the gate voltage, indicating that they were located in the near-surface drain region close to the gate. 7 These complexes are the likely source of the VRT defect.…”

Solid-state magnetometer using electrically detected magnetic resonance

“…Although spin-dependent recombination of carriers in semiconductors was discovered by D.J. Lepine in 1972 [1] and has since been used extensively to characterize deep-level defects and recombination centers [2][3][4][5], to our knowledge no one has proposed using the effect to build a semiconductor-based resonant magnetometer. If such a magnetometer can be realized, it would enable calibration-free field measurement using standard complementary metal-oxide-semiconductor (CMOS) technology.…”