Electro-analytical characterization of photovoltaic cells by combining voltammetry and impedance spectroscopy: voltage dependent parameters of a silicon solar cell under controlled illumination and temperature

Novel Nanocomposite Materials for Solar Cell Fabrication

“…We have demonstrated how this method can evaluate the temperature and voltage sensitive features of the minority carrier lifetimes, series and shunt resistances and back surface field (BSF) parameters of a solar cell. Apart from displaying their characteristic temperature dependencies, the parameters measured in this way have responded to variations of the cell voltage, and exhibited mutually interacting features of the observed effects [3][4][5]. These results have shown how the characteristic features of charge recombination in the quasi-neutral and space charge regions of the solar cell could be resolved with D.C. voltage dependent A.C. impedance measurements.…”

“…Crystalline Si cells have been used to establish the essential analytical protocols of this method [3][4][5][6]. We have demonstrated how this method can evaluate the temperature and voltage sensitive features of the minority carrier lifetimes, series and shunt resistances and back surface field (BSF) parameters of a solar cell.…”

High potential for the optimum designs for a front contact and junction: A route to heterojunction solar cell

“…The plot of junction resistance and capacitance shows a change in the slope as the applied bias proceeds from high FB towards the low FB region. This is mainly due to the dominance of space charge region (SCR) mechanism over the quasi-neutral region (QNR) with the change in applied bias [23,24]. In the low FB or in moderate RB, the fabricated device exhibits the value of R SH to be 10 kΩ cm À 2 , which is much higher than the previously reported values for mono and polycrystalline Si solar cells [14,15].…”

“…In the low FB or in moderate RB, the fabricated device exhibits the value of R SH to be 10 kΩ cm À 2 , which is much higher than the previously reported values for mono and polycrystalline Si solar cells [14,15]. A higher value of R SH increases the current through junction which results in an improved FF and junction voltage whereas a lower value of R SH in solar cell causes a power loss by providing the alternate current path for the light generated current which limits its η and FF [14,23]. Therefore in the fabricated solar cell the higher value of R SH is not a limiting factor for the lower FF.…”

“…Although the major voltage drop is across the p-Si, the expression for relative voltage drop at each side of the junction at V¼ 0 is given as V biITO V biSi ¼ N A ε Si N ITO ε ITO . The slope and intercept of the Mott Schottky plot gives a value of N A as 6.4 Â 10 15 cm À 3 and V bi of 0.65, which is commonly quoted for Si based solar cells [14,15,19,23,30].…”