Electrodeposition of CuInxGa1−xSe2 thin films

Friedfeld, R.; Raffaelle, Ryne P.; Mantovani, J. G.

doi:10.1016/s0927-0248(99)00010-0

Cited by 67 publications

(33 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Deposition of Cu-Ga [60] and Cu-In-Ga [52] alloys has been demonstrated, with the latter approach leading to 4% efficiency cells. Solopower explored the layer by layer electrodeposition to form stoichiometric CIGS thin-films [21].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

View full text Add to dashboard Cite

CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

show abstract

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

View full text Add to dashboard Cite

show abstract

“…Friedfeld et al 117) prepared CuIn x Ga 1−x Se 2 (CIGS) polycrystalline thin films using a two-step electrodeposition process that involved the electrodeposition of a CuGa precursor film on a molybdenum substrate, followed by the electrodeposition of a CuInSe thin film. The deposition of CuGa films was carried out from a solution containing CuSO 4 , Ga 2 (SO 4 ) 3 , and NaOH at −1.95 V vs. SCE for 2 min using a 500 rpm rotating disk electrode.…”

Section: )mentioning

confidence: 99%

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

Journal of Electrochemical Science and Technology

View full text Add to dashboard Cite

:Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

show abstract

“…deposited a CuGa 2 alloy phase consisting of 0.5 µ m isolated grains from a 5 M NaOH metal sulfate bath using a RDE [92] . A layer of CuInSe 2 was then added in a one -step electrodeposition, and the combined layer was annealed to form CIGS.…”

Section: Cu(inga)se 2 Via Metal Alloysmentioning

confidence: 99%