Electroless deposition of cadmium stannate, zinc oxide, and aluminum-doped zinc oxide films

Abstract

Articles you may be interested inAtomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell J. Vac. Sci. Technol. A 31, 01A125 (2013); 10.1116/1.4767837 Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition J. Vac. Sci. Technol. A 28, 515 (2010); 10.1116/1.3425640Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering J.Transparent conducting films of cadmium stannate (Cd 2 Sn0 4 ), zinc oxide, and aluminum-doped zinc oxide have been made by a simple, economical e1ectroless deposition technique. The asdeposited films of cadmium stannate have a 75% transmittance in the visible, 48% reflectance in theIR, and a band gap of2.7 eV. Its resistivity is -10-1 f} cm. Vacuum annealing changes the transmittance in the visible range to 82%, the IR reflectance to 62%, and the band gap to 3.1 eV. The correspondiing values for the hydrogen-annealed films are 87%,76%, and 3.2 eV. Annealing lowers the resistivity of the films to _10-2 and _10-3 f} cm for vacuum and hydrogen-annealed films, respectively. The undoped zinc oxide films have transmittance in the visible and reflectance in the IR of 80 and 67% respectively. Aluminum doping increases the transmittance to 88% and reflectance to 83%. The optical band gap of un doped and aluminum-doped zinc oxide films are found to be 3.40 and 3.98 eV, respectively. The resistivity is 1.20X 10-2 and 6.0X 10-2 {l cm for un doped and aluminum-doped ZnO films. Vacuum annealing reduces the resistivity of the films to 2.5X 10-3 and 2.1 X 10-4 f} cm for undoped and aluminum-doped ZnO films, respectiVely.

Structural, optical and electrical properties of In-doped Cd2SnO4 thin films by spray pyrolysis method

“…The average optical transmittance in the range of 500-850 nm is 78, 83, 87, and 73% for 0, 1, 3 and 5 wt.% In-doping, respectively. The 3 wt.% Indoped Cd 2 SnO 4 film shows a higher average transmittance of 87% in the wavelength range of 500-850 nm and this value is relatively higher than that of the previous reports of Cd 2 SnO 4 films prepared by spray pyrolysis method [9,22,24,34,35]. The optical band gap of Cd 2 SnO 4 and In-doped Cd 2 SnO 4 films was calculated from the optical transmission spectrum.…”

Physical properties of electroless CoO thin filins

“…Recently, interest in chemical bath deposition of oxide thin films was stimulated by reports on the successful chemical bath deposition of some technologically important oxide thin films [13][14][15][16][17][18][19]. This is understandable.…”

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

“…Metal salts are cheap, stable, and easy to use which makes them ideal precursors for the mass production of ZnO lms. Zinc sulfate, 36 zinc nitrate, 37,38 zinc chloride 39,40 and zinc acetate 41,42 are some of the common metal salts used to synthesize thin lms and nanoparticles of ZnO by solution-based techniques. A non-trivial problem in using metal salt precursors containing inorganic counterions in non-aqueous media is removing the anion from the lm while organic counterions such as acetate offer the advantage of producing volatile by-products upon sol pyrolysis.…”