Electromigration failure modes in damascene copper interconnects

Arnaud, L.; Gonella, R.; Tartavel, G.; Torrès, J.; Gounelle, C.; Gobil, Y.; Morand, Y.

doi:10.1016/s0026-2714(98)00122-x

Cited by 23 publications

(7 citation statements)

References 7 publications

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“…[1][2][3][4][5][6][7] In fact, the electromigration mechanism leading to failure in Cu is a controversial topic as many studies conducted with various testing methods have produced wide-ranging activation energies, 8 implying that the dominant failure mechanism is highly dependent on sample configuration and test method. Although lower resistivity provides the possibility of improved circuit performance and reliability, the accompanying change in manufacturing methods and simultaneous decrease in feature size has altered the factors influencing interconnect failure, making Cu-interconnect failure mechanisms a critical research area.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of electromigration failure in submicron Cu interconnects

Michael

Kim

Jiang

et al. 2002

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

Mechanism of electromigration failure in submicron Cu interconnects

Michael

Kim

Jiang

et al. 2002

Journal of Elec Materi

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“…Failure‐in‐time (FIT) is another way of reporting MTBF and is defined as the number of failures per million hours for a repairable product, with 1 FIT being equivalent to having an MTBF of 10 9 hours. The terms MTBF and FIT are commonly used by the semiconductor industry and component manufacturers, whereas many quantitative reliability studies involving Cu‐plated interconnects have used MTTF as typically the failure mechanisms are non‐repairable (eg, voiding due to electromigration).…”

Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning

confidence: 99%

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Lennon

Colwell

Rodbell

2018

Progress in Photovoltaics

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

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“…To introduce Cu into metal/via interconnections, the dual damascene process is required because Cu is difficult to etch. [1][2][3][4] Conventional physical vapor deposition ͑PVD͒ techniques are inadequate for filling sub-0.18 m and high-aspect-ratio trenches/vias. Accumulation of deposits at the upper corners of trenches/vias leads to pinch-off and void formation.…”

Section: Introductionmentioning

confidence: 99%

Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications

Chang

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Effects of a new combination of additives in acid electroplating solution on the properties of Cu thin films have been investigated. The electroplated Cu films exhibit an excellent superfilling behavior. 0.18 m vias with an aspect ratio exceeding 5 were filled completely without any void or seam. Strong ͑111͒ texture was found for the electroplated Cu films. The resistivity of a 450-nm-thick Cu film was measured to be 1.84 ⍀ cm.

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Electromigration failure modes in damascene copper interconnects

Cited by 23 publications

References 7 publications

Mechanism of electromigration failure in submicron Cu interconnects

Mechanism of electromigration failure in submicron Cu interconnects

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications

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