Electron-beam charging of dielectrics preirradiated with moderate-energy ions and electrons

Рау, Э. И.; Tatarintsev, A. A.; Zykova, E. Yu.; Ivanenko, I. P.; Kupreenko, S. Yu.; Minnebaev, K. F.; Хайдаров, А. А.

doi:10.1134/s1063783417080212

Cited by 18 publications

(4 citation statements)

References 32 publications

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“…The assumptions put forward were confirmed by the experimentally observed fact that after preliminary irradiation of the samples with electrons and low-energy ions, the sapphire began to charge immediately after switching-on the electron irradiation [1,2], that can be explained by the fact that the preliminary irradiation creates radiation defects in the sample near-surface region, which intensively capture the injected electrons.…”

Section: Introductionmentioning

confidence: 79%

“…In previous experiments [1][2][3] on the study of the kinetics of charging dielectric massive single-crystalline samples of sapphire and quartz, it was found that the surface potential of sapphire begins to grow only a few minutes after switching-on the electron irradiation. Moreover, the start time of sample charging depended both on the energy and on the current density of the irradiating electrons.…”

Section: Introductionmentioning

confidence: 98%

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Photoluminescence of sapphire irradiated by low-energy electrons and ions

E.Yu.

K.E.

A.A.

et al. 2022

Optics and Spectroscopy

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Photoluminescence (PL) of sapphire single crystals as received and preirradiated by low energy Ar+ ions and electrons has been studied to reveal a relationship between sapphire charging under electron beam irradiation and radiation-induced defect formation. The photoluminescence spectra were obtained using a confocal microscope excitation wavelength of 445 nm as well as by a nonconfocal method with excitation at a wavelength of 355 nm. The lines observed in PL spectra for all samples are associated with both intrinsic and impurity defects. It has been established that preliminary ion irradiation leads to disordering of the near-surface region of the sample resulting in a significant increase in the photoluminescence intensity. Preliminary electron irradiation can lead to a change in the charge state of defects that initially exist in the crystal. Keywords: radiation-stimulated defects, sapphire photoluminescence, ion and electron irradiation.

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Section: Introductionmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 98%

Photoluminescence of sapphire irradiated by low-energy electrons and ions

E.Yu.

K.E.

A.A.

et al. 2022

Optics and Spectroscopy

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“…Charging of dielectric targets by electron irradiation is a well-known phenomenon which should be taken into account in studies of dielectric materials and coatings with electron microscopy, in electron beam lithography, in development of dielectric coatings for spacecrafts and in other fields of science and engineering. Most of the works reported so far dealt with measuring the potential of the charged surface which is mainly determined by the balance between the charge of the primary electrons penetrating into the material and the charge of the emitted secondary electrons [1][2][3][4][5][6][7][8][9]. It was shown however [10] that charging kinetics is strongly affected by the spatial distribution of the electrons and holes formed by irradiation.…”

Section: Introductionmentioning

confidence: 99%

Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure

Kulanchikov¹,

Вергелес²,

Yakimov³

2019

MoEM

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Charging of dielectric targets by electron irradiation is a well-known phenomenon which should be taken into account in characterization of dielectric materials and coatings with electron microscopy, in electron beam lithography, in development of dielectric coatings for spacecrafts and other fields of science and engineering. Charging kinetics is strongly affected by spatial distribution of electrons and holes formed by irradiation. At the experimental electron beam energy electron penetration depth is smaller than dielectric thickness and this allows identifying the contribution of excess carrier transport to trap formation at the SiO2/Si interface. Low-energy electron beams have been shown to substantially affect C–V curve slope, i.e., to form traps at the interface. We have studied the effect of bias applied to the test structure before and after electron beam irradiation. The experiment has shown that bias of either polarity applied to the test MOS structure before low-energy electron beam irradiation practically does not affect the C–V curves of the test structure. Positive bias applied to the metallization layer during low-energy electron beam irradiation has a strong effect on the C–V curve pattern while negative bias affects the C–V curves but slightly. Study of the stability of the changes caused by electron beam irradiation has shown that the C–V curves of the test structure restore slowly even at room temperature. Application of negative bias decelerated charge relaxation.

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“…Controlled charging of dielectric surfaces is also needed in laboratory studies of the materials charging by plasma direct impact [11,12], as well as in microcircuits and materials radiation tests [13,14].…”

Section: Introductionmentioning

confidence: 99%

Calibration setup with metrological support for space qualified electric field probe

Kozlov¹,

Shilov²,

Styuf³

et al. 2018

MATEC Web Conf.

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Abstract. The article shows the results of calculations necessary for testing to approve the space qualified electric field probe used in outer space. A special electric field probe calibration setup was developed and manufactured, which allows testing a space qualified electric field probe in the entire measurement range (from ± 0.1 to ± 200 kV/m) under low (-80 °C) and high (+72 °C) temperatures and at reduced pressure of 1.3 · 10 -3 Pa (10 -5 torr). Metrological tests of the probes batch, calibrated by the space qualified electric field probe calibrator, performed at the verification equipment under normal conditions, showed that the maximum error of the electric field probe does not exceed 15% in the entire measurements range which will increase the accuracy of determining the satellite surface charging parameters and help in designing modern spacecrafts.

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Electron-beam charging of dielectrics preirradiated with moderate-energy ions and electrons

Cited by 18 publications

References 32 publications

Photoluminescence of sapphire irradiated by low-energy electrons and ions

Photoluminescence of sapphire irradiated by low-energy electrons and ions

Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure

Calibration setup with metrological support for space qualified electric field probe

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