Electron beam radiation effects on electrical and optical properties of pure and aluminum doped tin oxide films

Bhat, J. S.; Maddani, K.I.; Karguppikar, A. M.; Sanjeev, Ganesh

doi:10.1016/j.nimb.2007.02.074

Cited by 28 publications

(9 citation statements)

References 15 publications

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“…The optical band gap calculated using the Tauc's plot (not shown) lies in the range of 3?75-3?88 eV as given in Table 3, and the values agreed well with the reported values. 20,21,36,37 Photoluminescence studies…”

Section: Optical Studiesmentioning

confidence: 99%

Effect of solvent volume on properties of SnO₂:Al films

Thirumurugan¹,

Ravichandran²,

Mohan³

et al. 2013

Surface Engineering

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Aluminium doped tin oxide films (ATO) were deposited from starting solutions having different solvent volumes (10, 20, …, 50 mL), using a simplified spray pyrolysis technique and the effect of solvent volume on the structural, optical and electrical properties was investigated. Structural studies revealed that Al 3z incorporation into the Sn 4z sites of the SnO 2 lattice is gradually increased with increasing solvent volume. The variation in the preferential orientation factor f (110) as a function of solvent volume is discussed in detail. From electrical studies, it is found that the sheet resistance R sh is minimum (3?98 kV sq 21 ) when the solvent volume is minimum, and R sh increases as the volume of the solvent increases. The gradual decline in the intensity of the peak at 411 nm of the photoluminescence spectra indicated the decrease in the density of oxygen vacancies. The optical transmittance in the visible region is higher (85%) for higher solvent volume.

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Section: Optical Studiesmentioning

confidence: 99%

Effect of solvent volume on properties of SnO₂:Al films

Thirumurugan¹,

Ravichandran²,

Mohan³

et al. 2013

Surface Engineering

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“…The Sb doped tin oxide (ATO) thin films are considered as an alternative to ITO and FTO due to its excellent heat resistivity [4]. Many dopants, such as W [5], Al [6], In [7], F [8], Si [9], La [10], Ni [11], Pt [12], Vd [13], Pd [14], Fe [15] and Sb [16] have been used to improve the electrical properties of tin oxide thin films. But in case of Sb doping, antimony presents a real challenge to electronic structure calculation in order to explain its optoelectronic properties [17].…”

Section: Introductionmentioning

confidence: 99%

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Babar

Shinde

Moholkar

et al. 2010

Journal of Alloys and Compounds

125

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“…The suitability of the films synthesized by sol-gel methods for device applications was also reported (Kim et al, 2011). Bhat et al, (2007), employed sol-gel spin coating techniques to prepared Zn doped SnO2 films and the analyses of the electrical and optical characteristics were carried out. The electrical properties of the doped films were analyzed as the dopant concentrations varied up to 10 wt%.…”

Section: Introductionmentioning

confidence: 92%

“…Divalent (SnO) and tetravalent (SnO2) are two types of oxidation states in which tin oxides (SnOx) usually exist and they are respectively categorized into p and n-type semiconductors (Xu et al, 2013;Liu et al, 2010). Recently, tin (II) oxide enticed considerable consideration because of its ability in sustaining both structure and electronic characteristics (Guo et al, 2010). Tin oxides are one of the most favorable materials for future optoelectronic devices including translucent applications due to their high density of delocalized Sn 5s state in the valence band and Sn 5p state conduction band (Granato et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characterization of aluminum zinc co-doped tin oxide grown by sol-gel spin coating techniques

Adedokun

Bello

Adedeji

et al. 2020

Facta Univ Phys Chem Technol

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Aluminum Zinc co-doped Tin Oxide (AZSO) thin film was grown by sol-gel spin coating techniques onto a glass substrate using various doping concentrations (0, 2, 4, 6, and 8 wt%) and the effect of doping on each sample were studied using structural analysis; X-ray Diffraction (XRD) pattern, gravimetric method; thin film thickness and UV photo-spectrometer; optical properties. The results of the XRD were revealed that all the peaks have a tetragonal phase of SnO2, which were oriented at the 110, 101, and 211 planes. The film thickness was observed to vary with doping concentration. In the visible region, all the film samples were exhibited at average transmittance. The coefficient of absorption was gradually increased with an increase in photon energy at a certain level with a decrease in the absorption coefficient as the photon energy increases further. At 550-800 nm range of wavelength, a high extinction coefficient (k) was recorded and the refractive index curves show regular dispersion behavior. The optical conductivity of the films followed a similar pattern, which showed that conductivity increased to a peak at 3.60 eV. The energy bandgap of the film samples (AZSO1 - AZSO5) is 4.095 eV, 4.103 eV, 4.087 eV, 4.114 eV, and 4.106 eV, respectively. The studies show that the properties of Al-Zn co-doped SnO2 films can be explored for optoelectronic applications.

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Electron beam radiation effects on electrical and optical properties of pure and aluminum doped tin oxide films

Cited by 28 publications

References 15 publications

Effect of solvent volume on properties of SnO₂:Al films

Effect of solvent volume on properties of SnO₂:Al films

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Structural and optical characterization of aluminum zinc co-doped tin oxide grown by sol-gel spin coating techniques

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Electron beam radiation effects on electrical and optical properties of pure and aluminum doped tin oxide films

Cited by 28 publications

References 15 publications

Effect of solvent volume on properties of SnO2:Al films

Effect of solvent volume on properties of SnO2:Al films

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Structural and optical characterization of aluminum zinc co-doped tin oxide grown by sol-gel spin coating techniques

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Product

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Effect of solvent volume on properties of SnO₂:Al films

Effect of solvent volume on properties of SnO₂:Al films