Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Tsai, Jyun Yu; Chang, Ting Chang; Chen, Ching En; Ho, Shinn‐Ying; Liu, Kuan Ju; Lu, Ying‐Hsin; Liu, Xi Wen; Tseng, Tseung‐Yuen; Cheng, Osbert; Huang, Cheng Tung; Lu, Ching Sen

doi:10.1063/1.4896995

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…With the demand of multi-functional electronic devices increasing greatly in the world, the investigation of device physics will be important for IC industry [1]. Furthermore, the multi-functional portable electronic products should integrate with memory , display , logic devices [50][51][52][53][54][55][56][57], and functional devices (e.g. sensor) [58,59] according to device physics and fabrication technology.…”

Section: Introductionmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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Section: Introductionmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

Self Cite

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“…The other tunneling mechanism is Poole-Frenkel (P-F) tunneling that is effective in dielectric thin materials when they have high density of traps [25]. The standard flash memory cell industry utilizes Channel-Hot-Electron (C-H-E) injection mechanism for operations such as lateral electric field and applied drainsource voltage [26,27]. In addition to these tunnel mechanism, the band-to-band (B-T-B) tunneling FETs allow for excellent ON/OFF current ratios compared to other memory cells and MOSFETs in ultra-low voltage applications [28,29].…”

mentioning

confidence: 99%

Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells

Orak

Eren

Bıyıklı

et al. 2019

Applied Surface Science

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In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 10 13 cm -b . The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the I DS -V DS and I DS -V GS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a I ON /I OFF ratio of up to 52 orders of magnitude and its threshold voltage (V th ) was approximately −4.1 V using I ds −a/b -V gs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.

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Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

Liu

Chang

Tsai

et al. 2016

Applied Physics Letters

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This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

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Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Cited by 4 publications

References 29 publications

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

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