2012
DOI: 10.1039/c2nr31704d
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Electron holography characterization as a method for measurements of diameter and mean inner potential of hollow nanomaterials

Abstract: In this paper, we provide a method for the simultaneous measurement of the inner diameter of nanotubes with a regular shape and calculation of their mean inner potential (MIP) using electron holography. This method contains 4 steps: (i)phase profile characterization from electron holography; (ii) shape assumption from prepared data; (iii) thickness simulation from a shape assumption and fitting method; (iv) calculation of MIP of the simulated and fitted parameters. By this method, as an example, the shape and … Show more

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Cited by 4 publications
(2 citation statements)
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References 16 publications
(16 reference statements)
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“…25 Using electron holography, we can easily distinguish between the C 60 nanowhiskers and nanotubes. 26 The resistance of the C 60 nanowhiskers measured by an in situ TEM electrical probing system is about 10 MU, which is two orders of magnitude higher than the resistance obtained by the four probe method. 18 This implies that there is a large contact resistance between the gold tip and the C 60 nanowhisker.…”
Section: Resultsmentioning
confidence: 81%
“…25 Using electron holography, we can easily distinguish between the C 60 nanowhiskers and nanotubes. 26 The resistance of the C 60 nanowhiskers measured by an in situ TEM electrical probing system is about 10 MU, which is two orders of magnitude higher than the resistance obtained by the four probe method. 18 This implies that there is a large contact resistance between the gold tip and the C 60 nanowhisker.…”
Section: Resultsmentioning
confidence: 81%
“…The method to be described allows a calibrated setup for predefine FOV ranging from 35 nm to 2500 nm, ideal for the characterization of materials in nanotechnology from where we can extract quantitative information such as, e.g., electrostatic fields [4-9], magnetic fields [10-16], non-stained biological samples [17-18], determination of the thickness and surface morphology in nanostructured materials [19-21], dopant profiles and strain measurement in semiconductor technology [22-29]. New developments in improving the reconstructed phase and to avoid Frensel fringes can be obtained by novel configurations as the double or triple biprims in the microscope as well as a modified Lorentz conditions by controlling the diffraction lens in the microscope [30-32].…”
Section: Introductionmentioning
confidence: 99%