Electron mobility modeling in strained-Si n-MOSFETs using TCAD

Dash, T. P.; Pradhan, D.; Das, Sanghamitra; Nanda, Rajib Kumar

doi:10.1109/indicon.2016.7839160

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…Moreover, the mobility of the device with the strain effect is approximated using an empirical approach as formulated in (19). This approach is acceptable since a similar method has used in previous works [7,29,30]. In fact, the trends in threshold voltage and current are similar to the results obtained in [35].…”

Section: Resultsmentioning

confidence: 82%

“…In order to examine the strain effect on the electrical characteristic of SG NW, the transfer characteristics of that device were computed using L=1 um, N a =2e17 cm −3 , t ox =1 nm and V DS =0.2 V as shown in figure 11. The mobility of strained Silicon is calculated as m m = f , o where f is the enhancement factor obtained from [29,30], and low field mobility is defined as / m = 330 cm Vs. It can be inferred from the results that for two different Ge mole fractions(x), the on-current increased but the threshold (V th ) was reduced as the radius (R) increased.…”

Section: Resultsmentioning

confidence: 99%

“…, o where f is the enhancement factor due to Ge fraction and m o is the low field mobility of electron. The enhancement factor, f was extracted using the extrapolation method from [29,30].…”

Section: Ds In Chmentioning

confidence: 99%

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Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects

Hamid

Johari

Alias

et al. 2020

Semicond. Sci. Technol.

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This paper presents a modeling approach for strained silicon surrounding gate MOSFETs. The main contribution of this work is the simplification of the charge model by using an explicit solution technique which includes the strained and quantum effects. Quantum effects are essential due to extreme scaling of radius and oxide thickness. These can be solved by integrating the quantum capacitance and threshold in the proposed model. The gate capacitance is formulated based on a centroid charge that can be applied for multiple doping levels and structural dimensions. Meanwhile, the quantum effect on the channel due to carrier confinement can be approximated based on the radius of the channel. For the simulator, the Bohm Quantum Model (BQP) is used to facilitate the quantum effect. Our explicit model is in good agreement with the numerical simulator, for various gate voltages, doping concentration and structural effects, based on the centroid and inversion charge. It is found that the doping level can contribute to the changes in the centroid charge position from the silicon-oxide interface to the center of the channel. In addition, the tensile strain shows a significant impact on the electrical properties of the strained silicon surrounding gate such as threshold voltage, inversion charge, and current. This technique holds the potential for implementation is owing to advantages such as fast data computing which can be directly integrated into the circuit simulator.

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