Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides

Yount, J. T.; Lenahan, Patrick M.; Dunn, G.J.

doi:10.1109/23.211423

Cited by 31 publications

(17 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It may be that this step is somehow not possible in this dielectric. It is fairly clear, for example, that the increased radiation hardness of nitrided oxide device interface involves some sort of hydrogen/nitrogen defect interaction that in some way blocks the flow of hydrogen to the Si/SiO boundary, reducing the generation of centers [38]. As nitrogen is found in the hafnium nitrate precursor, it is also conceivable that a mechanism similar to that found in nitrided oxides suppresses interface trap formation in these samples.…”

Section: Discussionmentioning

confidence: 99%

The radiation response of the high dielectric-constant hafnium oxide/silicon system

Kang

Lenahan

Conley³

2002

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

We have explored the radiation response of the HfO 2 /Si system with a combination of capacitance versus voltage and electron spin resonance measurements on capacitor and bare oxide structures subjected to 60 Co gamma irradiation and vacuum ultraviolet irradiation. Our studies have utilized both (100)Si and (111)Si substrate structures. Capacitors have been irradiated under both positive and negative gate bias as well as with the gate floating. We find the "electronic" radiation response of the HfO 2 /Si system to be different from that of the Si/SiO 2 system. However, we find that the HfO 2 /Si interface defects and their response to hydrogen are quite similar to those of the Si/SiO 2 interface defects. We also find that the HfO 2 /Si atomic scale defects and their response to irradiation different from that of the Si/SiO 2 system. We find the radiation response of the HfO 2 /Si capacitors to be dominated by a very large buildup of negative oxide charge. We observe comparably little, if any, generation of Si/dielectric interface trap density, though we do observe substantial densities of Si/dielectric interface trap defects. The concentration of these defects is not measurably altered by irradiation. The structure of the most prominently observed HfO 2 /Si interface defects is somewhat similar to those observed in Si/SiO 2 systems. We observe comparatively little, if any, generation of slow traps/border traps/switching traps near the Si/HfO 2 interface.

show abstract

Section: Discussionmentioning

confidence: 99%

The radiation response of the high dielectric-constant hafnium oxide/silicon system

Kang

Lenahan

Conley³

2002

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Actually, the oxides nitrided by NH 3 showed a high density of electron traps, which is attributed to the Nð2Þ O defect, while the density of hole traps is lowered [8]. While moving to O-rich conditions, the density of incorporated N impurities decreases, while the relative concentration of N-related charge traps with respect to the total N concentration increases.…”

Section: When An O Atom Is Incorporated Into the N II -Simentioning

confidence: 97%

“…1 we rule out the possibility that the formation of these defects improves the electrical properties of Si oxynitrides. Actually, electron spin resonance measurements suggested the Nð2Þ O center to be the dominant electron trap [8].…”

mentioning

confidence: 99%

“…It was suggested that O vacancies ðV O Þ behave as a hole trap in the oxide [8] and are responsible for the stress-induced leakage current [9]. In the neutral charge state, V O is most stable in the Sidimerized configuration, where the two Si atoms near the vacancy form a dimer, without creating any dangling bond, while a puckered configuration with a broken Si-Si bond is more favorable for the suggested that H incorporation suppresses the generation of charge traps [3], our calculations indicate that defects containing a single N atom do not remove the electrical activities of O vacancies.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Atomic model for the electrical deactivation of N in Si oxynitrides

Lee

Chang

2003

Physica B: Condensed Matter

View full text Add to dashboard Cite

“…Hori et al 3 showed that the reoxidation can significantly diminish traps, while the generation of new nitrogen related traps was reported previously. 4 Therefore, we think that it is required to clarify following two points. First, whether nitrogen can generate traps or not.…”

Section: Detection Of Nitrogen Related Traps In Nitrided/reoxidized Smentioning

confidence: 99%

Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method

Yonamoto

Inaba

Akamatsu

2011

Applied Physics Letters

View full text Add to dashboard Cite

We constructed the new method to analyze thermally stimulated current (TSC) using maximum entropy method. This method allows us to extract trap density depending on trap energy level [Nt(Et)] from a TSC curve. Using this to analyze TSC of as-deposited, nitrided, and reoxidized thin silicon dioxide films, we were able to determine Nt(Et) of hole traps with very highly energy resolution and to observe the generation of nitrogen related hole traps.

show abstract

Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides

Cited by 31 publications

References 62 publications

The radiation response of the high dielectric-constant hafnium oxide/silicon system

The radiation response of the high dielectric-constant hafnium oxide/silicon system

Atomic model for the electrical deactivation of N in Si oxynitrides

Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method

Contact Info

Product

Resources

About