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Electron spin resonance spectroscopy is used to identify and compare point defects in N20-nitrided, NH,-nitrided, and conventional SiO, films. We detect only three types of defects in these dielectrics. Pb centers, the primary source of interface states in Si/SiOz systems under all technologically significant circumstances, appear in all three dielectrics. Both N,O and NH, nitridation result in higher as-processed P, interface defect densities, but lower radiation-induced Pb defect generation. Thus N20 nitridation appears capable, as does NH, nitridation, of providing reduced radiation-induced interface state generation. In addition, both nitridations appear capable of lowering the number of radiation-induced E' centers, the dominant hole trap in conventional thermal oxides. NH3 nitridation, however, appears to offer greater resistance to radiation-induced generation of these traps. NH3 nitridation also results in a large number of bridging nitrogen centers, and strong evidence indicates that the bridging nitrogen centers are the dominant electron trap in NHs-nitrided and -reoxidized nitrided oxide films. These defects are absent in N20-nitrided films, which are known to exhibit reduced levels of electron trapping.. 1754

Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the Pb center, an interfacial point defect. The values of g⊥ in Pb spectra observed in the nitrided oxide and reoxidized nitrided oxide systems differ from Si/SiO2 systems, suggesting that the average value of the tensile stress in the silicon substrate increases upon nitridation while reoxidation acts to return the interfacial stress to prenitridation levels. The implications of these structural changes upon device performance are discussed.

We characterize the effects of ionizing radiation on oxynitrides furnace-grown in N20. Results are presented on hole trapping, interface trap creation, time-dependent hole annealing, and hole de-trapping using thermally-stimulated current analysis. This work was supported ky the United States Department o| Energy under Conlr:.ct DE-AC r_4-94ALsaSnn0' DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, h-ademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.. I_ii_"l'_i_tJ_l'lON OF "IrHISDOCUMENT IS UNLIMIFEI..,

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