No abstract

No abstract

Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the Pbo center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.

Electron spin resonance spectroscopy is used to identify and compare point defects in N20-nitrided, NH,-nitrided, and conventional SiO, films. We detect only three types of defects in these dielectrics. Pb centers, the primary source of interface states in Si/SiOz systems under all technologically significant circumstances, appear in all three dielectrics. Both N,O and NH, nitridation result in higher as-processed P, interface defect densities, but lower radiation-induced Pb defect generation. Thus N20 nitridation appears capable, as does NH, nitridation, of providing reduced radiation-induced interface state generation. In addition, both nitridations appear capable of lowering the number of radiation-induced E' centers, the dominant hole trap in conventional thermal oxides. NH3 nitridation, however, appears to offer greater resistance to radiation-induced generation of these traps. NH3 nitridation also results in a large number of bridging nitrogen centers, and strong evidence indicates that the bridging nitrogen centers are the dominant electron trap in NHs-nitrided and -reoxidized nitrided oxide films. These defects are absent in N20-nitrided films, which are known to exhibit reduced levels of electron trapping.. 1754

A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools. The method provides significantly enhanced accuracy in simulations when compared to circuit data, yet retains practicality and flexibility.