Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps

Wang, Miaomiao; He, Wei; P., T.

doi:10.1063/1.1924893

Cited by 24 publications

(28 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, for the RJ, strong low-energy modes with additional trap-assisted reso-nant states at 100 and 121 mV are observed, suggesting a disordered growth of rubrene films. Based on a previous study on trap-assisted tunneling, 17 the energy level of the trap ͑V t ͒ above the electrode Fermi level and the physical position of the trap ͑d t ͒ from the bottom electrode are extracted using…”

mentioning

confidence: 99%

Effect of molecular ordering on spin and charge injection in rubrene

Raman¹,

Watson

Shim³

et al. 2009

Phys. Rev. B

View full text Add to dashboard Cite

Studies have shown that interfaces play a crucial role for efficient spin injection and transport. Here, we address the complex role of interface in spin and charge injection into organic materials by various interfacesensitive characterization tools. Inelastic tunneling spectroscopy and polarized neutron reflectometry were mainly adopted to explore the interfaces of high mobility organic semiconductor rubrene sandwiched by two ferromagnetic electrodes. The dramatic difference in the reported magnetotransport properties and charge injection characteristics in trilayer magnetic junctions has been attributed to the different growth morphology of rubrene molecules at the interface dictated by the presence or absence of a 0.6 nm alumina seed layer. The magnetic contribution of the top ferromagnetic electrode is also influenced by the morphology of the rubrene layer underneath, directly affecting the spin injection efficiency. This work highlights the importance of interface engineering in the development of organic-based spintronics devices. DOI: 10.1103/PhysRevB.80.195212 PACS number͑s͒: 72.25.Dc, 72.25.Mk, 72.80.Le, 75.47.Ϫm Spin transport in -conjugated organic semiconductors ͑OSs͒ is necessarily a vast and complex area that is just beginning to be explored.1 Recent demonstrations of spin transport in organic materials [2][3][4][5][6] have been promising, giving impetus to explore the potential of OSs in spintronics applications. Although their study can be extremely challenging, it is expected to be rich in knowledge. For instance, unlike inorganic semiconductors, OSs have shown significantly complex charge injection and transport mechanisms. To date, several theories have dealt with the transport phenomena: modeling the strong electron-phonon coupling ͑polarons͒ and the structural disorder of the molecules to account for the observed transport characteristics in different organic systems.7-9 Growth-related structural changes in OS films have also been known to influence the transport properties 10 and, consequently, the spin injection and transport, as observed in this work. Due to the complexity associated with organic systems, appropriate characterization methods need to be implemented to understand the spin transport.In our recent work, we demonstrated a large tunneling magnetoresistance ͑TMR͒ of 6% at room temperature, showing a spin-diffusion length of 13 nm in thin amorphous rubrene films ͑C 42 H 28 ͒.11 The study was performed in the tunnel junction structure for hybrid ͑rubrene film grown on alumina as tunnel barrier͒ and rubrene ͑rubrene film grown without alumina seed layer͒ barriers. In this work, we address the role of interfaces, their influence on the growth morphology of the OS, and hence on the transport properties by performing interface-sensitive characterization by inelastic tunneling spectroscopy ͑IETS͒ and polarized neutron reflectometry ͑PNR͒ measurements. Charge and spin transport measurements were extended to thick rubrene barriers ͑Ͼ20 nm͒ to obtain information on the evolution of t...

show abstract

mentioning

confidence: 99%

Effect of molecular ordering on spin and charge injection in rubrene

Raman¹,

Watson

Shim³

et al. 2009

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Since these phonons have much higher energies than kT at room temperature, they are not effective scattering centers at room temperature. IETS can also be used to probe electronic traps in gate dielectrics, as trap-assisted tunneling gives rise to distinct signature in the IETS spectrum, which is quite different from simple charge trapping [4,5] . Furthermore, one can calculate the spatial locations and energies of these electronic traps by analyzing the IETS spectra in both voltage polarities [5] , the details of which can be found in ref.…”

Section: Inelastic Electron Tunneling Spectroscopy (Iets)mentioning

confidence: 99%

“…Furthermore, one can calculate the spatial locations and energies of these electronic traps by analyzing the IETS spectra in both voltage polarities [5] , the details of which can be found in ref. [5].…”

Section: Inelastic Electron Tunneling Spectroscopy (Iets)mentioning

confidence: 99%

See 1 more Smart Citation

Novel electrical characterization for advanced CMOS gate dielectrics

2008

Sci. China Ser. F-Inf. Sci.

Self Cite

View full text Add to dashboard Cite

“…When the thickness of the SiO 2 gate dielectric is below 1.4 nm, the electron tunneling effects and leakage current become serious obstacles for the device reliability [1]. The replacement of SiO 2 with high-k dielectrics (dielectric constant larger than that of SiO 2 , 3.9)is a solution to the challenge.…”

Section: Introductionmentioning

confidence: 99%

Investigation of anomalous capacitance-voltage behavior caused by interface dipoles and the effect of post-metal-annealing

Zhao

et al. 2017

AIP Conference Proceedings

View full text Add to dashboard Cite

Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps

Cited by 24 publications

References 4 publications

Effect of molecular ordering on spin and charge injection in rubrene

Effect of molecular ordering on spin and charge injection in rubrene

Novel electrical characterization for advanced CMOS gate dielectrics

Investigation of anomalous capacitance-voltage behavior caused by interface dipoles and the effect of post-metal-annealing

Contact Info

Product

Resources

About